A Dynamic-Adjusting Threshold-Voltage Scheme for FinFETs low power designs
In this paper, a novel device/circuit co-design scheme, namely Dynamic-Adjusting Threshold-Voltage Scheme (DATS) for independent-gate mode FinFET circuits has been proposed. The main idea of this scheme is that a pair of back-gate bias of FinFETs is adjusted dynamically to change threshold voltage a...
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| creator | XiaoXin Cui KaiSheng Ma Kai Liao Nan Liao Di Wu Wei Wei Rui Li DunShan Yu |
| description | In this paper, a novel device/circuit co-design scheme, namely Dynamic-Adjusting Threshold-Voltage Scheme (DATS) for independent-gate mode FinFET circuits has been proposed. The main idea of this scheme is that a pair of back-gate bias of FinFETs is adjusted dynamically to change threshold voltage according to the system operating frequency and operating mode, which could optimize circuit power, especially leakage power. The experimental and simulation result shows that the leakage power dissipation reduced greatly when circuits operate at the lower frequency, and the energy-delay product of FinFET circuits is reduced by 30% approximately. |
| doi_str_mv | 10.1109/ISCAS.2013.6571799 |
| format | Conference Proceeding |
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| identifier | ISSN: 0271-4302 |
| ispartof | 2013 IEEE International Symposium on Circuits and Systems (ISCAS), 2013, p.129-132 |
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| language | eng |
| recordid | cdi_ieee_primary_6571799 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Clocks FinFETs Integrated circuit modeling Logic gates Phase locked loops Power dissipation Threshold voltage |
| title | A Dynamic-Adjusting Threshold-Voltage Scheme for FinFETs low power designs |
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