A single chip HBT power amplifier with integrated power control

The GSM power amplifier market continues to drive towards low cost and small size, but remains reluctant to compromise on performance. Current generation PA products utilize InGaP HBT to deliver RF performance and integrate bias and control on a supporting silicon die. This approach is common amongs...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	Ripley, David S.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Gain GSM Heterojunction bipolar transistors Power amplifiers Power control Radio frequency Switches
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!