Zinc Oxide Nanowire Lateral Field Emission Devices and its Application as Display Pixel Structures
The rational design and fabrication of zinc oxide (ZnO) nanowire (NW) lateral field electron emission device and the possible application as a display pixel structure are reported. In the device, the cathode and anode are ranked side-by-side on the same panel. The NW-clusters were controlled to loca...
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| Veröffentlicht in: | IEEE transactions on electron devices 2013-09, Vol.60 (9), p.2924-2930 |
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| creator | Li, Duo She, Juncong Xu, Shaozeng Deng, Shaozhi |
| description | The rational design and fabrication of zinc oxide (ZnO) nanowire (NW) lateral field electron emission device and the possible application as a display pixel structure are reported. In the device, the cathode and anode are ranked side-by-side on the same panel. The NW-clusters were controlled to locally grow on the edges of the electrodes with different tilted status, i.e., in angle range of 75°-110°, 0°-110°, and 0°-57°, respectively. The devices with NWs at different tilt-angle showed distinct field electron emission properties. The device with 0°-57° tilted NWs possess the best performance, i.e., an emission current of 9.3 μA (current density: 6.22 A/cm 2 ) was obtained at a low cathode-anode (50 μm in separation) bias of 477 V. Stable cathodoluminescence was observed from the indium titanic oxide anode, suggests a possibility for display application. Mechanisms responsible for the enhanced field electron emission and the related device physics are proposed. Significantly, the low temperature (~ 80°C) solution-phase growth of ZnO NWs enables the fabrication of the devices on flexible polyimide substrate, which has also been demonstrated here. This paper opens up possibilities on developing NW-based lateral field electron emission device for vacuum micro/nanoelectronics applications. |
| doi_str_mv | 10.1109/TED.2013.2272597 |
| format | Article |
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In the device, the cathode and anode are ranked side-by-side on the same panel. The NW-clusters were controlled to locally grow on the edges of the electrodes with different tilted status, i.e., in angle range of 75°-110°, 0°-110°, and 0°-57°, respectively. The devices with NWs at different tilt-angle showed distinct field electron emission properties. The device with 0°-57° tilted NWs possess the best performance, i.e., an emission current of 9.3 μA (current density: 6.22 A/cm 2 ) was obtained at a low cathode-anode (50 μm in separation) bias of 477 V. Stable cathodoluminescence was observed from the indium titanic oxide anode, suggests a possibility for display application. Mechanisms responsible for the enhanced field electron emission and the related device physics are proposed. Significantly, the low temperature (~ 80°C) solution-phase growth of ZnO NWs enables the fabrication of the devices on flexible polyimide substrate, which has also been demonstrated here. This paper opens up possibilities on developing NW-based lateral field electron emission device for vacuum micro/nanoelectronics applications.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2013.2272597</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Anodes ; Applied sciences ; Cross-disciplinary physics: materials science; rheology ; Electron emission ; Electron trajectory ; Electronics ; Exact sciences and technology ; Indium tin oxide ; lateral field emission device ; luminescence ; Materials science ; Molecular electronics, nanoelectronics ; Nanoscale materials and structures: fabrication and characterization ; nanowire (NW) ; Physics ; pixel structure ; Quantum wires ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Substrates ; Vacuum microelectronics ; Zinc oxide</subject><ispartof>IEEE transactions on electron devices, 2013-09, Vol.60 (9), p.2924-2930</ispartof><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c293t-367072d572642b97cb44cba7c29fc10896b4fe1c93b30a7a17cecc47204e31ef3</citedby><cites>FETCH-LOGICAL-c293t-367072d572642b97cb44cba7c29fc10896b4fe1c93b30a7a17cecc47204e31ef3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6565348$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6565348$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27677425$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Li, Duo</creatorcontrib><creatorcontrib>She, Juncong</creatorcontrib><creatorcontrib>Xu, Shaozeng</creatorcontrib><creatorcontrib>Deng, Shaozhi</creatorcontrib><title>Zinc Oxide Nanowire Lateral Field Emission Devices and its Application as Display Pixel Structures</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>The rational design and fabrication of zinc oxide (ZnO) nanowire (NW) lateral field electron emission device and the possible application as a display pixel structure are reported. In the device, the cathode and anode are ranked side-by-side on the same panel. The NW-clusters were controlled to locally grow on the edges of the electrodes with different tilted status, i.e., in angle range of 75°-110°, 0°-110°, and 0°-57°, respectively. The devices with NWs at different tilt-angle showed distinct field electron emission properties. The device with 0°-57° tilted NWs possess the best performance, i.e., an emission current of 9.3 μA (current density: 6.22 A/cm 2 ) was obtained at a low cathode-anode (50 μm in separation) bias of 477 V. Stable cathodoluminescence was observed from the indium titanic oxide anode, suggests a possibility for display application. Mechanisms responsible for the enhanced field electron emission and the related device physics are proposed. Significantly, the low temperature (~ 80°C) solution-phase growth of ZnO NWs enables the fabrication of the devices on flexible polyimide substrate, which has also been demonstrated here. This paper opens up possibilities on developing NW-based lateral field electron emission device for vacuum micro/nanoelectronics applications.</description><subject>Anodes</subject><subject>Applied sciences</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Electron emission</subject><subject>Electron trajectory</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Indium tin oxide</subject><subject>lateral field emission device</subject><subject>luminescence</subject><subject>Materials science</subject><subject>Molecular electronics, nanoelectronics</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>nanowire (NW)</subject><subject>Physics</subject><subject>pixel structure</subject><subject>Quantum wires</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Substrates</subject><subject>Vacuum microelectronics</subject><subject>Zinc oxide</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kEtLw0AUhQdRsFb3gpvZuEydV2Yyy9KHCsUK1o2bcDO5gZE0DTOptv--KS1dXQ7nfHfxEfLI2YhzZl9Ws-lIMC5HQhiRWnNFBjxNTWK10tdkwBjPEiszeUvuYvzto1ZKDEjx4xtHlztfIv2AZvPvA9IFdBigpnOPdUlnax-j3zR0in_eYaTQlNR3kY7btvYOumMHkU59bGvY00-_w5p-dWHrum3AeE9uKqgjPpzvkHzPZ6vJW7JYvr5PxovECSu7RGrDjChTI7QShTWuUMoVYPq2cpxlVheqQu6sLCQDA9w4dE4ZwRRKjpUcEnb668ImxoBV3ga_hrDPOcuPjvLeUX50lJ8d9cjzCWkhOqirAI3z8cIJo41RIu13T6edR8RLrVOdSpXJA3uEcBk</recordid><startdate>20130901</startdate><enddate>20130901</enddate><creator>Li, Duo</creator><creator>She, Juncong</creator><creator>Xu, Shaozeng</creator><creator>Deng, Shaozhi</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20130901</creationdate><title>Zinc Oxide Nanowire Lateral Field Emission Devices and its Application as Display Pixel Structures</title><author>Li, Duo ; She, Juncong ; Xu, Shaozeng ; Deng, Shaozhi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c293t-367072d572642b97cb44cba7c29fc10896b4fe1c93b30a7a17cecc47204e31ef3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Anodes</topic><topic>Applied sciences</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Electron emission</topic><topic>Electron trajectory</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Indium tin oxide</topic><topic>lateral field emission device</topic><topic>luminescence</topic><topic>Materials science</topic><topic>Molecular electronics, nanoelectronics</topic><topic>Nanoscale materials and structures: fabrication and characterization</topic><topic>nanowire (NW)</topic><topic>Physics</topic><topic>pixel structure</topic><topic>Quantum wires</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Substrates</topic><topic>Vacuum microelectronics</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, Duo</creatorcontrib><creatorcontrib>She, Juncong</creatorcontrib><creatorcontrib>Xu, Shaozeng</creatorcontrib><creatorcontrib>Deng, Shaozhi</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005–Present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Li, Duo</au><au>She, Juncong</au><au>Xu, Shaozeng</au><au>Deng, Shaozhi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Zinc Oxide Nanowire Lateral Field Emission Devices and its Application as Display Pixel Structures</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2013-09-01</date><risdate>2013</risdate><volume>60</volume><issue>9</issue><spage>2924</spage><epage>2930</epage><pages>2924-2930</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>The rational design and fabrication of zinc oxide (ZnO) nanowire (NW) lateral field electron emission device and the possible application as a display pixel structure are reported. In the device, the cathode and anode are ranked side-by-side on the same panel. The NW-clusters were controlled to locally grow on the edges of the electrodes with different tilted status, i.e., in angle range of 75°-110°, 0°-110°, and 0°-57°, respectively. The devices with NWs at different tilt-angle showed distinct field electron emission properties. The device with 0°-57° tilted NWs possess the best performance, i.e., an emission current of 9.3 μA (current density: 6.22 A/cm 2 ) was obtained at a low cathode-anode (50 μm in separation) bias of 477 V. Stable cathodoluminescence was observed from the indium titanic oxide anode, suggests a possibility for display application. Mechanisms responsible for the enhanced field electron emission and the related device physics are proposed. Significantly, the low temperature (~ 80°C) solution-phase growth of ZnO NWs enables the fabrication of the devices on flexible polyimide substrate, which has also been demonstrated here. This paper opens up possibilities on developing NW-based lateral field electron emission device for vacuum micro/nanoelectronics applications.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2013.2272597</doi><tpages>7</tpages></addata></record> |
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| subjects | Anodes Applied sciences Cross-disciplinary physics: materials science rheology Electron emission Electron trajectory Electronics Exact sciences and technology Indium tin oxide lateral field emission device luminescence Materials science Molecular electronics, nanoelectronics Nanoscale materials and structures: fabrication and characterization nanowire (NW) Physics pixel structure Quantum wires Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Substrates Vacuum microelectronics Zinc oxide |
| title | Zinc Oxide Nanowire Lateral Field Emission Devices and its Application as Display Pixel Structures |
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