In-situ characterization of MOCVD grown GaAs-and InP-based tunable VCSEL structures

In-situ characterization of MOCVD grown GaAs-and InP-based tunable VCSEL structures

In-situ monitoring of growth parameters such as thickness and quality of InP and GaAs based materials is presented. This is a key technology for the fabrication of optoelectronic devices like VCSELs.

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Bibliographische Detailangaben
Hauptverfasser: Grasse, Christian, Tomita, Yuto, Wiecha, Peter, Meyer, Ralf, Grundl, Tobias
Format: Tagungsbericht
Sprache:eng
Schlagworte:
GaAs
in-situ monitoring
Indium phosphide
InP
MOCVD
Monitoring
Reflectivity
Rough surfaces
Surface morphology
Surface roughness
VCSEL
Vertical cavity surface emitting lasers
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Beschreibung
Zusammenfassung:In-situ monitoring of growth parameters such as thickness and quality of InP and GaAs based materials is presented. This is a key technology for the fabrication of optoelectronic devices like VCSELs.
ISSN:1092-8669
DOI:10.1109/ICIPRM.2013.6562579