p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers

Within the last years, III-nitride-based devices have been demonstrated with exceptional performance. There is, however, a severe lack of knowledge when it comes fabrication of p-channel devices. p-Channel heterostructure field-effect transistors (HFETs) could open the way for nitride-based compleme...

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Veröffentlicht in:	IEEE transactions on electron devices 2013-10, Vol.60 (10), p.3005-3011
Hauptverfasser:	Hahn, Herwig, Reuters, Benjamin, Pooth, Alexander, Hollander, Bernd, Heuken, Michael, Kalisch, Holger, Vescan, Andrei
Format:	Artikel
Sprache:	eng
Schlagworte:	AlInGaN depletion mode enhancement mode Gallium nitride HEMTs Leakage currents Logic gates MODFETs p-channel quaternary Two dimensional hole gas
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creator	Hahn, Herwig Reuters, Benjamin Pooth, Alexander Hollander, Bernd Heuken, Michael Kalisch, Holger Vescan, Andrei
description	Within the last years, III-nitride-based devices have been demonstrated with exceptional performance. There is, however, a severe lack of knowledge when it comes fabrication of p-channel devices. p-Channel heterostructure field-effect transistors (HFETs) could open the way for nitride-based complementary logic. Here, a comprehensive study of enhancement and depletion mode p-channel GaN/AlInGaN HFETs is performed. The influence of a highly p-doped GaN cap layer on device performance is investigated. Gate recessing and changes in composition of the backbarrier are analyzed. ON/OFF ratios of up to 10 8 and subthreshold swings of about 75 mV/decade are achieved.
doi_str_mv	10.1109/TED.2013.2272330
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subjects	AlInGaN depletion mode enhancement mode Gallium nitride HEMTs Leakage currents Logic gates MODFETs p-channel quaternary Two dimensional hole gas
title	p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers
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