High Voltage Vertical GaN p-n Diodes With Avalanche Capability

In this paper, vertical p-n diodes fabricated on pseudobulk gallium nitride (GaN) substrates are discussed. The measured devices demonstrate breakdown voltages of 2600 V with a differential specific on-resistance of 2 mΩ cm 2 . This performance places these structures beyond the SiC theoretical limi...

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Veröffentlicht in:	IEEE transactions on electron devices 2013-10, Vol.60 (10), p.3067-3070
Hauptverfasser:	Kizilyalli, Isik C., Edwards, Andrew P., Hui Nie, Disney, Don, Bour, Dave
Format:	Artikel
Sprache:	eng
Schlagworte:	Avalanche breakdown Electric breakdown Gallium nitride gallium nitride (GaN) power diodes power-semiconductor devices Schottky diodes Silicon Substrates
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