Properties of silicon thin films grown by the temperature difference method (TDM)

In this paper we describe the temperature difference method (TDM) as a promising technology for the continuous growth of thin film silicon from the solution on large area polycrystalline substrates (10/spl times/10 cm/sup 2/). The thermodynamic driving force of the layer growth by TDM is generated b...

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Hauptverfasser:	Thomas, B., Muller, G., Wilde, P.-M., Wawra, H.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	CARRIER LIFETIME Charge carriers Conductivity CRYSTAL GROWTH Doping LIQUID PHASE EPITAXY MATERIALS SCIENCE Semiconductor thin films SILICON SILICON SOLAR CELLS SOLAR ENERGY Substrates Temperature TEMPERATURE GRADIENTS Thermal force Thermodynamics Time division multiplexing
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