High-Efficiency Silicon-Based Envelope-Tracking Power Amplifier Design With Envelope Shaping for Broadband Wireless Applications
This paper presents a highly efficient silicon-based envelope-tracking power amplifier (ET-PA) for broadband wireless applications. A pseudo-differential power amplifier (PA) is designed using two integrated SiGe power cells fabricated in a 0.35- μm SiGe BiCMOS technology with through-silicon-via (T...
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| Veröffentlicht in: | IEEE journal of solid-state circuits 2013-09, Vol.48 (9), p.2030-2040 |
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| container_title | IEEE journal of solid-state circuits |
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| creator | Ruili Wu Yen-Ting Liu Lopez, Jerry Schecht, Cliff Yan Li Lie, Donald Y. C. |
| description | This paper presents a highly efficient silicon-based envelope-tracking power amplifier (ET-PA) for broadband wireless applications. A pseudo-differential power amplifier (PA) is designed using two integrated SiGe power cells fabricated in a 0.35- μm SiGe BiCMOS technology with through-silicon-via (TSV). In the continuous-wave (CW) measurement, the PA achieves a saturated output power (POUT) of around 2 W with power-added efficiency (PAE) above 65% across the bandwidth of 0.7-1.0 GHz. To optimize the ET-PA system performance, several envelope shaping methods such as dc shifting, envelope scaling, envelope clipping, and envelope attenuation at back-off have been investigated carefully. A highly efficient monolithic CMOS envelope modulator (EM) integrated circuit (IC) is designed in a 0.35- μm bipolar-CMOS-DMOS (BCD) process to mate with our SiGe PA. With the LTE 16 QAM 5/10/20-MHz input signals, our ET-PA system achieves around 28 dBm linear POUT, passing the stringent LTE linearity specs such as the spectrum emission mask with an average composite system PAE of 42.3%/41.1%/40.2%, respectively. No predistortion is applied in this work. |
| doi_str_mv | 10.1109/JSSC.2013.2265501 |
| format | Article |
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C.</creator><creatorcontrib>Ruili Wu ; Yen-Ting Liu ; Lopez, Jerry ; Schecht, Cliff ; Yan Li ; Lie, Donald Y. C.</creatorcontrib><description>This paper presents a highly efficient silicon-based envelope-tracking power amplifier (ET-PA) for broadband wireless applications. A pseudo-differential power amplifier (PA) is designed using two integrated SiGe power cells fabricated in a 0.35- μm SiGe BiCMOS technology with through-silicon-via (TSV). In the continuous-wave (CW) measurement, the PA achieves a saturated output power (POUT) of around 2 W with power-added efficiency (PAE) above 65% across the bandwidth of 0.7-1.0 GHz. To optimize the ET-PA system performance, several envelope shaping methods such as dc shifting, envelope scaling, envelope clipping, and envelope attenuation at back-off have been investigated carefully. A highly efficient monolithic CMOS envelope modulator (EM) integrated circuit (IC) is designed in a 0.35- μm bipolar-CMOS-DMOS (BCD) process to mate with our SiGe PA. With the LTE 16 QAM 5/10/20-MHz input signals, our ET-PA system achieves around 28 dBm linear POUT, passing the stringent LTE linearity specs such as the spectrum emission mask with an average composite system PAE of 42.3%/41.1%/40.2%, respectively. No predistortion is applied in this work.</description><identifier>ISSN: 0018-9200</identifier><identifier>EISSN: 1558-173X</identifier><identifier>DOI: 10.1109/JSSC.2013.2265501</identifier><identifier>CODEN: IJSCBC</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Amplifiers ; Applied sciences ; Circuit properties ; Design. Technologies. Operation analysis. Testing ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; envelope modulator (EM) ; envelope shaping method ; Envelope-tracking (ET) ; Exact sciences and technology ; Gain ; Integrated circuits ; Linearity ; long-term evolution (LTE) ; Modulation ; Peak to average power ratio ; Radio frequency ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; SiGe power amplifier (SiGe PA) ; Signal convertors ; Silicon germanium ; Through-silicon vias ; through-silicon-via (TSV)</subject><ispartof>IEEE journal of solid-state circuits, 2013-09, Vol.48 (9), p.2030-2040</ispartof><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c295t-db974e5ab268dc58aabba716330b6a3a01eb826f1d8d5686b45b39c9eeec42993</citedby><cites>FETCH-LOGICAL-c295t-db974e5ab268dc58aabba716330b6a3a01eb826f1d8d5686b45b39c9eeec42993</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6542009$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,796,23930,23931,25140,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6542009$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27734946$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Ruili Wu</creatorcontrib><creatorcontrib>Yen-Ting Liu</creatorcontrib><creatorcontrib>Lopez, Jerry</creatorcontrib><creatorcontrib>Schecht, Cliff</creatorcontrib><creatorcontrib>Yan Li</creatorcontrib><creatorcontrib>Lie, Donald Y. C.</creatorcontrib><title>High-Efficiency Silicon-Based Envelope-Tracking Power Amplifier Design With Envelope Shaping for Broadband Wireless Applications</title><title>IEEE journal of solid-state circuits</title><addtitle>JSSC</addtitle><description>This paper presents a highly efficient silicon-based envelope-tracking power amplifier (ET-PA) for broadband wireless applications. A pseudo-differential power amplifier (PA) is designed using two integrated SiGe power cells fabricated in a 0.35- μm SiGe BiCMOS technology with through-silicon-via (TSV). In the continuous-wave (CW) measurement, the PA achieves a saturated output power (POUT) of around 2 W with power-added efficiency (PAE) above 65% across the bandwidth of 0.7-1.0 GHz. To optimize the ET-PA system performance, several envelope shaping methods such as dc shifting, envelope scaling, envelope clipping, and envelope attenuation at back-off have been investigated carefully. A highly efficient monolithic CMOS envelope modulator (EM) integrated circuit (IC) is designed in a 0.35- μm bipolar-CMOS-DMOS (BCD) process to mate with our SiGe PA. With the LTE 16 QAM 5/10/20-MHz input signals, our ET-PA system achieves around 28 dBm linear POUT, passing the stringent LTE linearity specs such as the spectrum emission mask with an average composite system PAE of 42.3%/41.1%/40.2%, respectively. No predistortion is applied in this work.</description><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Circuit properties</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>envelope modulator (EM)</subject><subject>envelope shaping method</subject><subject>Envelope-tracking (ET)</subject><subject>Exact sciences and technology</subject><subject>Gain</subject><subject>Integrated circuits</subject><subject>Linearity</subject><subject>long-term evolution (LTE)</subject><subject>Modulation</subject><subject>Peak to average power ratio</subject><subject>Radio frequency</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>SiGe power amplifier (SiGe PA)</subject><subject>Signal convertors</subject><subject>Silicon germanium</subject><subject>Through-silicon vias</subject><subject>through-silicon-via (TSV)</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1LAzEQhoMoWKs_QLzsxePWfGyyybHWapWCwlb0tkyySRvd7i5JUXrzp7ulpaeZYZ53Bh6ErgkeEYLV3UtRTEYUEzaiVHCOyQkaEM5lSnL2eYoGGBOZKorxObqI8asfs0ySAfqb-eUqnTrnjbeN2SaFr71pm_Qeoq2SafNj67az6SKA-fbNMnlrf21Ixuuu9s733YONftkkH36zOtJJsYJuB7s2JPehhUpDU_VMsLWNMRl3fdrAxrdNvERnDuporw51iN4fp4vJLJ2_Pj1PxvPUUMU3aaVVnlkOmgpZGS4BtIacCMawFsAAE6slFY5UsuJCCp1xzZRR1lqTUaXYEJH9XRPaGIN1ZRf8GsK2JLjcKSx3CsudwvKgsM_c7jMdRAO1C9AYH49BmucsU5nouZs95_t3x7XgWe9bsX9XCHyi</recordid><startdate>20130901</startdate><enddate>20130901</enddate><creator>Ruili Wu</creator><creator>Yen-Ting Liu</creator><creator>Lopez, Jerry</creator><creator>Schecht, Cliff</creator><creator>Yan Li</creator><creator>Lie, Donald Y. C.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20130901</creationdate><title>High-Efficiency Silicon-Based Envelope-Tracking Power Amplifier Design With Envelope Shaping for Broadband Wireless Applications</title><author>Ruili Wu ; Yen-Ting Liu ; Lopez, Jerry ; Schecht, Cliff ; Yan Li ; Lie, Donald Y. C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c295t-db974e5ab268dc58aabba716330b6a3a01eb826f1d8d5686b45b39c9eeec42993</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Amplifiers</topic><topic>Applied sciences</topic><topic>Circuit properties</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>envelope modulator (EM)</topic><topic>envelope shaping method</topic><topic>Envelope-tracking (ET)</topic><topic>Exact sciences and technology</topic><topic>Gain</topic><topic>Integrated circuits</topic><topic>Linearity</topic><topic>long-term evolution (LTE)</topic><topic>Modulation</topic><topic>Peak to average power ratio</topic><topic>Radio frequency</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>SiGe power amplifier (SiGe PA)</topic><topic>Signal convertors</topic><topic>Silicon germanium</topic><topic>Through-silicon vias</topic><topic>through-silicon-via (TSV)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ruili Wu</creatorcontrib><creatorcontrib>Yen-Ting Liu</creatorcontrib><creatorcontrib>Lopez, Jerry</creatorcontrib><creatorcontrib>Schecht, Cliff</creatorcontrib><creatorcontrib>Yan Li</creatorcontrib><creatorcontrib>Lie, Donald Y. C.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005–Present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE Xplore (Online service)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>IEEE journal of solid-state circuits</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ruili Wu</au><au>Yen-Ting Liu</au><au>Lopez, Jerry</au><au>Schecht, Cliff</au><au>Yan Li</au><au>Lie, Donald Y. C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-Efficiency Silicon-Based Envelope-Tracking Power Amplifier Design With Envelope Shaping for Broadband Wireless Applications</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><stitle>JSSC</stitle><date>2013-09-01</date><risdate>2013</risdate><volume>48</volume><issue>9</issue><spage>2030</spage><epage>2040</epage><pages>2030-2040</pages><issn>0018-9200</issn><eissn>1558-173X</eissn><coden>IJSCBC</coden><abstract>This paper presents a highly efficient silicon-based envelope-tracking power amplifier (ET-PA) for broadband wireless applications. A pseudo-differential power amplifier (PA) is designed using two integrated SiGe power cells fabricated in a 0.35- μm SiGe BiCMOS technology with through-silicon-via (TSV). In the continuous-wave (CW) measurement, the PA achieves a saturated output power (POUT) of around 2 W with power-added efficiency (PAE) above 65% across the bandwidth of 0.7-1.0 GHz. To optimize the ET-PA system performance, several envelope shaping methods such as dc shifting, envelope scaling, envelope clipping, and envelope attenuation at back-off have been investigated carefully. A highly efficient monolithic CMOS envelope modulator (EM) integrated circuit (IC) is designed in a 0.35- μm bipolar-CMOS-DMOS (BCD) process to mate with our SiGe PA. With the LTE 16 QAM 5/10/20-MHz input signals, our ET-PA system achieves around 28 dBm linear POUT, passing the stringent LTE linearity specs such as the spectrum emission mask with an average composite system PAE of 42.3%/41.1%/40.2%, respectively. No predistortion is applied in this work.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/JSSC.2013.2265501</doi><tpages>11</tpages></addata></record> |
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| subjects | Amplifiers Applied sciences Circuit properties Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics envelope modulator (EM) envelope shaping method Envelope-tracking (ET) Exact sciences and technology Gain Integrated circuits Linearity long-term evolution (LTE) Modulation Peak to average power ratio Radio frequency Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SiGe power amplifier (SiGe PA) Signal convertors Silicon germanium Through-silicon vias through-silicon-via (TSV) |
| title | High-Efficiency Silicon-Based Envelope-Tracking Power Amplifier Design With Envelope Shaping for Broadband Wireless Applications |
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