New electrical testing structures and analysis method for MOL and BEOL process diagnostics and TDDB reliability assessment
Both MOL PC-CA spacer dielectric and BEOL low-k dielectric breakdown data are commonly convoluted with multiple variables present in the data due to the involvement of many process steps such as lithography, etch, CMP, cleaning, and thin film deposition. With the continuing aggressive scaling of dev...
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| creator | Fen Chen Mittl, S. Shinosky, M. Dufresne, R. Aitken, J. Yanfeng Wang Kolvenback, K. Henson, W. K. Mocuta, D. |
| description | Both MOL PC-CA spacer dielectric and BEOL low-k dielectric breakdown data are commonly convoluted with multiple variables present in the data due to the involvement of many process steps such as lithography, etch, CMP, cleaning, and thin film deposition. With the continuing aggressive scaling of device dimensions and introduction of new device configurations, how to accurately analyze such complicated lateral dielectric breakdown data from MOL and BEOL TDDB in advanced VLSI circuits has become very challenging. In this paper, a new electrical method is developed to accurately characterize different variables in MOL and BEOL dielectric breakdown. This method provides a powerful way to do a fast deep dive process and reliability analysis for technology development and qualification without time consuming physical failure analysis. |
| doi_str_mv | 10.1109/IRPS.2013.6532104 |
| format | Conference Proceeding |
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K.</creatorcontrib><creatorcontrib>Mocuta, D.</creatorcontrib><title>New electrical testing structures and analysis method for MOL and BEOL process diagnostics and TDDB reliability assessment</title><title>2013 IEEE International Reliability Physics Symposium (IRPS)</title><addtitle>IRPS</addtitle><description>Both MOL PC-CA spacer dielectric and BEOL low-k dielectric breakdown data are commonly convoluted with multiple variables present in the data due to the involvement of many process steps such as lithography, etch, CMP, cleaning, and thin film deposition. With the continuing aggressive scaling of device dimensions and introduction of new device configurations, how to accurately analyze such complicated lateral dielectric breakdown data from MOL and BEOL TDDB in advanced VLSI circuits has become very challenging. In this paper, a new electrical method is developed to accurately characterize different variables in MOL and BEOL dielectric breakdown. This method provides a powerful way to do a fast deep dive process and reliability analysis for technology development and qualification without time consuming physical failure analysis.</description><subject>Dielectric breakdown</subject><subject>Equations</subject><subject>Logic gates</subject><subject>low-k reliability</subject><subject>low-k TDDB</subject><subject>MOL reliability</subject><subject>Optical variables measurement</subject><subject>PC-CA reliabiltiy</subject><subject>PC-CA TDDB</subject><subject>Pollution measurement</subject><subject>Reliability</subject><issn>1541-7026</issn><issn>1938-1891</issn><isbn>9781479901128</isbn><isbn>1479901121</isbn><isbn>9781479901111</isbn><isbn>147990113X</isbn><isbn>1479901113</isbn><isbn>9781479901135</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2013</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVkMtOwzAQRc1LopR-AGLjH0jxK7G9pA-gUqEIyrpynHExSpPKdoXK1xPRbrjSaK50Zu7iInRDyZBSou9mb6_vQ0YoHxY5Z5SIEzTQUlEhtSa00ynqUc1VRpWmZ_8YU-cdywXNJGHFJbqK8YsQRrgqeujnBb4x1GBT8NbUOEFMvlnjmMLOpl2AiE1TdWPqffQRbyB9thV2bcDPi_kfG007sw2thRhx5c26absMe3hcTiYjHKD2pvS1T3tsYuzuNtCka3ThTB1hcNx99PEwXY6fsvnicTa-n2eeCZoynhPrJCd5SUSZ60oJKx0o7krnOJGMUw1K64JBzrWlVnEBppK6ypXjsiS8j24PuR4AVtvgNybsV8ca-S8F3WME</recordid><startdate>201304</startdate><enddate>201304</enddate><creator>Fen Chen</creator><creator>Mittl, S.</creator><creator>Shinosky, M.</creator><creator>Dufresne, R.</creator><creator>Aitken, J.</creator><creator>Yanfeng Wang</creator><creator>Kolvenback, K.</creator><creator>Henson, W. K.</creator><creator>Mocuta, D.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201304</creationdate><title>New electrical testing structures and analysis method for MOL and BEOL process diagnostics and TDDB reliability assessment</title><author>Fen Chen ; Mittl, S. ; Shinosky, M. ; Dufresne, R. ; Aitken, J. ; Yanfeng Wang ; Kolvenback, K. ; Henson, W. K. ; Mocuta, D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i241t-350cf7305b04b59d84c7fe83fbff3072319e89962e539c1c834ead79d58f37b03</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Dielectric breakdown</topic><topic>Equations</topic><topic>Logic gates</topic><topic>low-k reliability</topic><topic>low-k TDDB</topic><topic>MOL reliability</topic><topic>Optical variables measurement</topic><topic>PC-CA reliabiltiy</topic><topic>PC-CA TDDB</topic><topic>Pollution measurement</topic><topic>Reliability</topic><toplevel>online_resources</toplevel><creatorcontrib>Fen Chen</creatorcontrib><creatorcontrib>Mittl, S.</creatorcontrib><creatorcontrib>Shinosky, M.</creatorcontrib><creatorcontrib>Dufresne, R.</creatorcontrib><creatorcontrib>Aitken, J.</creatorcontrib><creatorcontrib>Yanfeng Wang</creatorcontrib><creatorcontrib>Kolvenback, K.</creatorcontrib><creatorcontrib>Henson, W. K.</creatorcontrib><creatorcontrib>Mocuta, D.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Fen Chen</au><au>Mittl, S.</au><au>Shinosky, M.</au><au>Dufresne, R.</au><au>Aitken, J.</au><au>Yanfeng Wang</au><au>Kolvenback, K.</au><au>Henson, W. K.</au><au>Mocuta, D.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>New electrical testing structures and analysis method for MOL and BEOL process diagnostics and TDDB reliability assessment</atitle><btitle>2013 IEEE International Reliability Physics Symposium (IRPS)</btitle><stitle>IRPS</stitle><date>2013-04</date><risdate>2013</risdate><spage>PI.1.1</spage><epage>PI.1.5</epage><pages>PI.1.1-PI.1.5</pages><issn>1541-7026</issn><eissn>1938-1891</eissn><isbn>9781479901128</isbn><isbn>1479901121</isbn><eisbn>9781479901111</eisbn><eisbn>147990113X</eisbn><eisbn>1479901113</eisbn><eisbn>9781479901135</eisbn><abstract>Both MOL PC-CA spacer dielectric and BEOL low-k dielectric breakdown data are commonly convoluted with multiple variables present in the data due to the involvement of many process steps such as lithography, etch, CMP, cleaning, and thin film deposition. With the continuing aggressive scaling of device dimensions and introduction of new device configurations, how to accurately analyze such complicated lateral dielectric breakdown data from MOL and BEOL TDDB in advanced VLSI circuits has become very challenging. In this paper, a new electrical method is developed to accurately characterize different variables in MOL and BEOL dielectric breakdown. This method provides a powerful way to do a fast deep dive process and reliability analysis for technology development and qualification without time consuming physical failure analysis.</abstract><pub>IEEE</pub><doi>10.1109/IRPS.2013.6532104</doi></addata></record> |
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| identifier | ISSN: 1541-7026 |
| ispartof | 2013 IEEE International Reliability Physics Symposium (IRPS), 2013, p.PI.1.1-PI.1.5 |
| issn | 1541-7026 1938-1891 |
| language | eng |
| recordid | cdi_ieee_primary_6532104 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Dielectric breakdown Equations Logic gates low-k reliability low-k TDDB MOL reliability Optical variables measurement PC-CA reliabiltiy PC-CA TDDB Pollution measurement Reliability |
| title | New electrical testing structures and analysis method for MOL and BEOL process diagnostics and TDDB reliability assessment |
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