Intrinsic dielectric stack reliability of a high performance bulk planar 20nm replacement gate high-k metal gate technology and comparison to 28nm gate first high-k metal gate process

We compare the intrinsic reliability of the dielectric stack of a high performance bulk planar 20nm replacement gate technology to the reliability of high performance bulk planar 28 nm gate first high-k metal gate (HKMG) technology, developed within the IBM Alliance. Comparable N/PFET TDDB and compa...

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Bibliographische Detailangaben

Hauptverfasser:	McMahon, W., Tian, C., Uppal, S., Kothari, H., Jin, M., LaRosa, G., Nigam, T., Kerber, A., Linder, B. P., Cartier, E., Lai, W. L., Liu, Y., Ramachandran, R., Kwon, U., Parameshwaran, B., Krishnan, S., Narayanan, V.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Dielectrics high-k gate dielectrics Logic gates Metals Performance evaluation Reliability semiconductor device reliability Stress
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