Resolving discrete emission events: A new perspective for detrapping investigation in NAND Flash memories

We report the first experimental evidence of discrete threshold-voltage transients on high-density NAND Flash arrays during post-cycling data retention. Proper choice of experimental conditions eliminates the impact of averaging effects and disturbs on the transients, enabling clear detection of sin...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Miccoli, C., Barber, J., Compagnoni, C. M., Paolucci, G. M., Kessenich, J., Lacaita, A. L., Spinelli, A. S., Koval, R. J., Goda, A.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Arrays Electron traps Flash memories Probability program/erase cycling Reliability semiconductor device modeling semiconductor device reliability Transient analysis
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!