Comparison of electrical techniques for temperature evaluation in power MOS transistors
Three electrical techniques (pulsed-gate, AC-conductance and sense-diode) for temperature evaluation in power MOS transistors have been experimentally compared on the same device. The device under test is a silicon-on-insulator (SOI) laterally-diffused MOSFET (LDMOS) design with embedded sense-diode...
Gespeichert in:
| Hauptverfasser: | , , , , , , , , , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 120 |
|---|---|
| container_issue | |
| container_start_page | 115 |
| container_title | |
| container_volume | |
| creator | Ferrara, A. Steeneken, P. G. Reimann, K. Heringa, A. Yan, L. Boksteen, B. K. Swanenberg, M. Koops, G. E. J. Scholten, A. J. Surdeanu, R. Schmitz, J. Hueting, R. J. E. |
| description | Three electrical techniques (pulsed-gate, AC-conductance and sense-diode) for temperature evaluation in power MOS transistors have been experimentally compared on the same device. The device under test is a silicon-on-insulator (SOI) laterally-diffused MOSFET (LDMOS) design with embedded sense-diodes in the center and at the edge of the device for providing local temperature information. On-wafer measurements have been performed on a thermal chuck in the temperature range 25-200°C to extract self-heating information and predict the junction temperature for different biasing conditions. Good agreement (within 10%) between the different techniques is achieved, evidencing that reliable temperature estimations can be made using each of the proposed electrical techniques. As a result, factors other than experimental accuracy will play a role in the choice of the most adequate technique for the application of interest. Guidelines for this choice are provided in a benchmarking analysis accounting for ease of application, temperature calibration and accuracy of the results. |
| doi_str_mv | 10.1109/ICMTS.2013.6528156 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_6528156</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6528156</ieee_id><sourcerecordid>6528156</sourcerecordid><originalsourceid>FETCH-LOGICAL-i219t-908668408aaec0eaa502d5f53df5f6ae5722edb3e5695bfb326b5fe04b1b2b883</originalsourceid><addsrcrecordid>eNo1kMtqwzAURNUX1EnzA-1GP-BUV7JkeVlMH4GELJLSZZCcK6ri2K6ktPTva2i6GoZhDsMQcgtsDsCq-0W92m7mnIGYK8k1SHVGJlCoUhS60HBOMg5S58B4dUFmVan_M1lckgxYCXnFBL8mkxg_GBtBEjLyVveHwQQf-472jmKLTQq-MS1N2Lx3_vOIkbo-jPYwYDDpGJDil2mPJvmx4zs69N8Y6Gq9oSmYLvqY-hBvyJUzbcTZSafk9elxW7_ky_Xzon5Y5p5DlcZFWildMG0MNgyNkYzvpZNi76RTBmXJOe6tQKkqaZ0VXFnpkBUWLLdaiym5--N6RNwNwR9M-NmdDhK__s5XwA</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Comparison of electrical techniques for temperature evaluation in power MOS transistors</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Ferrara, A. ; Steeneken, P. G. ; Reimann, K. ; Heringa, A. ; Yan, L. ; Boksteen, B. K. ; Swanenberg, M. ; Koops, G. E. J. ; Scholten, A. J. ; Surdeanu, R. ; Schmitz, J. ; Hueting, R. J. E.</creator><creatorcontrib>Ferrara, A. ; Steeneken, P. G. ; Reimann, K. ; Heringa, A. ; Yan, L. ; Boksteen, B. K. ; Swanenberg, M. ; Koops, G. E. J. ; Scholten, A. J. ; Surdeanu, R. ; Schmitz, J. ; Hueting, R. J. E.</creatorcontrib><description>Three electrical techniques (pulsed-gate, AC-conductance and sense-diode) for temperature evaluation in power MOS transistors have been experimentally compared on the same device. The device under test is a silicon-on-insulator (SOI) laterally-diffused MOSFET (LDMOS) design with embedded sense-diodes in the center and at the edge of the device for providing local temperature information. On-wafer measurements have been performed on a thermal chuck in the temperature range 25-200°C to extract self-heating information and predict the junction temperature for different biasing conditions. Good agreement (within 10%) between the different techniques is achieved, evidencing that reliable temperature estimations can be made using each of the proposed electrical techniques. As a result, factors other than experimental accuracy will play a role in the choice of the most adequate technique for the application of interest. Guidelines for this choice are provided in a benchmarking analysis accounting for ease of application, temperature calibration and accuracy of the results.</description><identifier>ISSN: 1071-9032</identifier><identifier>ISBN: 9781467348454</identifier><identifier>ISBN: 1467348457</identifier><identifier>EISSN: 2158-1029</identifier><identifier>EISBN: 1467348481</identifier><identifier>EISBN: 9781467348478</identifier><identifier>EISBN: 1467348473</identifier><identifier>EISBN: 9781467348485</identifier><identifier>DOI: 10.1109/ICMTS.2013.6528156</identifier><language>eng</language><publisher>IEEE</publisher><subject>AC-conductance ; Calibration ; Junctions ; Logic gates ; power MOS ; pulsed-gate ; self-heating ; sense-diode ; Temperature ; Temperature distribution ; Temperature measurement ; Temperature sensors ; thermal resistance</subject><ispartof>2013 IEEE International Conference on Microelectronic Test Structures (ICMTS), 2013, p.115-120</ispartof><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6528156$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6528156$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Ferrara, A.</creatorcontrib><creatorcontrib>Steeneken, P. G.</creatorcontrib><creatorcontrib>Reimann, K.</creatorcontrib><creatorcontrib>Heringa, A.</creatorcontrib><creatorcontrib>Yan, L.</creatorcontrib><creatorcontrib>Boksteen, B. K.</creatorcontrib><creatorcontrib>Swanenberg, M.</creatorcontrib><creatorcontrib>Koops, G. E. J.</creatorcontrib><creatorcontrib>Scholten, A. J.</creatorcontrib><creatorcontrib>Surdeanu, R.</creatorcontrib><creatorcontrib>Schmitz, J.</creatorcontrib><creatorcontrib>Hueting, R. J. E.</creatorcontrib><title>Comparison of electrical techniques for temperature evaluation in power MOS transistors</title><title>2013 IEEE International Conference on Microelectronic Test Structures (ICMTS)</title><addtitle>ICMTS</addtitle><description>Three electrical techniques (pulsed-gate, AC-conductance and sense-diode) for temperature evaluation in power MOS transistors have been experimentally compared on the same device. The device under test is a silicon-on-insulator (SOI) laterally-diffused MOSFET (LDMOS) design with embedded sense-diodes in the center and at the edge of the device for providing local temperature information. On-wafer measurements have been performed on a thermal chuck in the temperature range 25-200°C to extract self-heating information and predict the junction temperature for different biasing conditions. Good agreement (within 10%) between the different techniques is achieved, evidencing that reliable temperature estimations can be made using each of the proposed electrical techniques. As a result, factors other than experimental accuracy will play a role in the choice of the most adequate technique for the application of interest. Guidelines for this choice are provided in a benchmarking analysis accounting for ease of application, temperature calibration and accuracy of the results.</description><subject>AC-conductance</subject><subject>Calibration</subject><subject>Junctions</subject><subject>Logic gates</subject><subject>power MOS</subject><subject>pulsed-gate</subject><subject>self-heating</subject><subject>sense-diode</subject><subject>Temperature</subject><subject>Temperature distribution</subject><subject>Temperature measurement</subject><subject>Temperature sensors</subject><subject>thermal resistance</subject><issn>1071-9032</issn><issn>2158-1029</issn><isbn>9781467348454</isbn><isbn>1467348457</isbn><isbn>1467348481</isbn><isbn>9781467348478</isbn><isbn>1467348473</isbn><isbn>9781467348485</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2013</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1kMtqwzAURNUX1EnzA-1GP-BUV7JkeVlMH4GELJLSZZCcK6ri2K6ktPTva2i6GoZhDsMQcgtsDsCq-0W92m7mnIGYK8k1SHVGJlCoUhS60HBOMg5S58B4dUFmVan_M1lckgxYCXnFBL8mkxg_GBtBEjLyVveHwQQf-472jmKLTQq-MS1N2Lx3_vOIkbo-jPYwYDDpGJDil2mPJvmx4zs69N8Y6Gq9oSmYLvqY-hBvyJUzbcTZSafk9elxW7_ky_Xzon5Y5p5DlcZFWildMG0MNgyNkYzvpZNi76RTBmXJOe6tQKkqaZ0VXFnpkBUWLLdaiym5--N6RNwNwR9M-NmdDhK__s5XwA</recordid><startdate>20130101</startdate><enddate>20130101</enddate><creator>Ferrara, A.</creator><creator>Steeneken, P. G.</creator><creator>Reimann, K.</creator><creator>Heringa, A.</creator><creator>Yan, L.</creator><creator>Boksteen, B. K.</creator><creator>Swanenberg, M.</creator><creator>Koops, G. E. J.</creator><creator>Scholten, A. J.</creator><creator>Surdeanu, R.</creator><creator>Schmitz, J.</creator><creator>Hueting, R. J. E.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>20130101</creationdate><title>Comparison of electrical techniques for temperature evaluation in power MOS transistors</title><author>Ferrara, A. ; Steeneken, P. G. ; Reimann, K. ; Heringa, A. ; Yan, L. ; Boksteen, B. K. ; Swanenberg, M. ; Koops, G. E. J. ; Scholten, A. J. ; Surdeanu, R. ; Schmitz, J. ; Hueting, R. J. E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i219t-908668408aaec0eaa502d5f53df5f6ae5722edb3e5695bfb326b5fe04b1b2b883</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2013</creationdate><topic>AC-conductance</topic><topic>Calibration</topic><topic>Junctions</topic><topic>Logic gates</topic><topic>power MOS</topic><topic>pulsed-gate</topic><topic>self-heating</topic><topic>sense-diode</topic><topic>Temperature</topic><topic>Temperature distribution</topic><topic>Temperature measurement</topic><topic>Temperature sensors</topic><topic>thermal resistance</topic><toplevel>online_resources</toplevel><creatorcontrib>Ferrara, A.</creatorcontrib><creatorcontrib>Steeneken, P. G.</creatorcontrib><creatorcontrib>Reimann, K.</creatorcontrib><creatorcontrib>Heringa, A.</creatorcontrib><creatorcontrib>Yan, L.</creatorcontrib><creatorcontrib>Boksteen, B. K.</creatorcontrib><creatorcontrib>Swanenberg, M.</creatorcontrib><creatorcontrib>Koops, G. E. J.</creatorcontrib><creatorcontrib>Scholten, A. J.</creatorcontrib><creatorcontrib>Surdeanu, R.</creatorcontrib><creatorcontrib>Schmitz, J.</creatorcontrib><creatorcontrib>Hueting, R. J. E.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ferrara, A.</au><au>Steeneken, P. G.</au><au>Reimann, K.</au><au>Heringa, A.</au><au>Yan, L.</au><au>Boksteen, B. K.</au><au>Swanenberg, M.</au><au>Koops, G. E. J.</au><au>Scholten, A. J.</au><au>Surdeanu, R.</au><au>Schmitz, J.</au><au>Hueting, R. J. E.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Comparison of electrical techniques for temperature evaluation in power MOS transistors</atitle><btitle>2013 IEEE International Conference on Microelectronic Test Structures (ICMTS)</btitle><stitle>ICMTS</stitle><date>2013-01-01</date><risdate>2013</risdate><spage>115</spage><epage>120</epage><pages>115-120</pages><issn>1071-9032</issn><eissn>2158-1029</eissn><isbn>9781467348454</isbn><isbn>1467348457</isbn><eisbn>1467348481</eisbn><eisbn>9781467348478</eisbn><eisbn>1467348473</eisbn><eisbn>9781467348485</eisbn><abstract>Three electrical techniques (pulsed-gate, AC-conductance and sense-diode) for temperature evaluation in power MOS transistors have been experimentally compared on the same device. The device under test is a silicon-on-insulator (SOI) laterally-diffused MOSFET (LDMOS) design with embedded sense-diodes in the center and at the edge of the device for providing local temperature information. On-wafer measurements have been performed on a thermal chuck in the temperature range 25-200°C to extract self-heating information and predict the junction temperature for different biasing conditions. Good agreement (within 10%) between the different techniques is achieved, evidencing that reliable temperature estimations can be made using each of the proposed electrical techniques. As a result, factors other than experimental accuracy will play a role in the choice of the most adequate technique for the application of interest. Guidelines for this choice are provided in a benchmarking analysis accounting for ease of application, temperature calibration and accuracy of the results.</abstract><pub>IEEE</pub><doi>10.1109/ICMTS.2013.6528156</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1071-9032 |
| ispartof | 2013 IEEE International Conference on Microelectronic Test Structures (ICMTS), 2013, p.115-120 |
| issn | 1071-9032 2158-1029 |
| language | eng |
| recordid | cdi_ieee_primary_6528156 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | AC-conductance Calibration Junctions Logic gates power MOS pulsed-gate self-heating sense-diode Temperature Temperature distribution Temperature measurement Temperature sensors thermal resistance |
| title | Comparison of electrical techniques for temperature evaluation in power MOS transistors |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T14%3A14%3A15IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Comparison%20of%20electrical%20techniques%20for%20temperature%20evaluation%20in%20power%20MOS%20transistors&rft.btitle=2013%20IEEE%20International%20Conference%20on%20Microelectronic%20Test%20Structures%20(ICMTS)&rft.au=Ferrara,%20A.&rft.date=2013-01-01&rft.spage=115&rft.epage=120&rft.pages=115-120&rft.issn=1071-9032&rft.eissn=2158-1029&rft.isbn=9781467348454&rft.isbn_list=1467348457&rft_id=info:doi/10.1109/ICMTS.2013.6528156&rft_dat=%3Cieee_6IE%3E6528156%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=1467348481&rft.eisbn_list=9781467348478&rft.eisbn_list=1467348473&rft.eisbn_list=9781467348485&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=6528156&rfr_iscdi=true |