Single bit-line 7T SRAM cell for low power and high SNM

Memories are integral parts of most of the digital devices and hence reducing power consumption of memory is very important in improving the system performance, efficiency and stability. Most of the embedded and portable devices use SRAM cells because of their ease of use as well as low standby leak...

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Bibliographische Detailangaben

Hauptverfasser:	Madiwalar, B., Kariyappa, B. S.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	7T-SRAM cell Discharges (electric) HSNM (Hold State Noise Margin) low power Noise read stable RNM (Read Noise Margin) Single bit line SNM (Static Noise Margin) SRAM (Static Random Access Memory) SRAM cells Stability analysis Transistors Wireless sensor networks WNM (Write Noise Margin)
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