Fringing field and short channel effects in thin-body SOI MOSFETs with shallow source/drain

This work explores numerically the short-channel effects in thin-body SOI MOSFETs with shallow source/drain architecture, where the junction depths are less than the associated silicon body thicknesses. Unique fringing field and short-channel behavior are observed in the unconventional SOI devices....

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Jui-Kai Hsia, Chun-Hsing Shih, Ting-Shiuan Kang, Nguyen Dang Chien, Nguyen Van Kien
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Fringing Field Logic gates MOSFET Shallow Source/Drain Short-Channel Effect Silicon-on-Insulator SOI MOSFETs Substrates
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