Fringing field and short channel effects in thin-body SOI MOSFETs with shallow source/drain
This work explores numerically the short-channel effects in thin-body SOI MOSFETs with shallow source/drain architecture, where the junction depths are less than the associated silicon body thicknesses. Unique fringing field and short-channel behavior are observed in the unconventional SOI devices....
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| creator | Jui-Kai Hsia Chun-Hsing Shih Ting-Shiuan Kang Nguyen Dang Chien Nguyen Van Kien |
| description | This work explores numerically the short-channel effects in thin-body SOI MOSFETs with shallow source/drain architecture, where the junction depths are less than the associated silicon body thicknesses. Unique fringing field and short-channel behavior are observed in the unconventional SOI devices. Numerical results of the short-channel effects are compared with those in the conventional SOI MOSFETs. For given silicon body thicknesses, the shallow junction SOI devices exhibit the superior short-channel immunity over the conventional counterparts. |
| doi_str_mv | 10.1109/ULIS.2013.6523530 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_6523530</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6523530</ieee_id><sourcerecordid>6523530</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-b740985eb923231fa5445d423c6890c65767eb063a9c28eb0014c6a126eae623</originalsourceid><addsrcrecordid>eNo1kM9Kw0AYxFdEUGseQLzsCyT99n_2KMVqoZJD9eShbDZfzErcSDZS-vZGrDAwM4ffHIaQWwYFY2CXr9vNruDARKEVF0rAGblmUhshS2DqnGTWlP8dxCXJUvoAgJk1YOQVeVuPIb7Pom3AvqEuNjR1wzhR37kYsafYtuinREOkUxdiXg_Nke6qDX2uduuHl0QPYepmxvX9cKBp-B49LpvRhXhDLlrXJ8xOviC_wOop31aPm9X9Ng8Wprw2EmypsLZccMFap6RUjeTC69KC18pogzVo4azn5ZyASa8d4xodai4W5O5vNSDi_msMn2487k9viB_shVHl</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Fringing field and short channel effects in thin-body SOI MOSFETs with shallow source/drain</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Jui-Kai Hsia ; Chun-Hsing Shih ; Ting-Shiuan Kang ; Nguyen Dang Chien ; Nguyen Van Kien</creator><creatorcontrib>Jui-Kai Hsia ; Chun-Hsing Shih ; Ting-Shiuan Kang ; Nguyen Dang Chien ; Nguyen Van Kien</creatorcontrib><description>This work explores numerically the short-channel effects in thin-body SOI MOSFETs with shallow source/drain architecture, where the junction depths are less than the associated silicon body thicknesses. Unique fringing field and short-channel behavior are observed in the unconventional SOI devices. Numerical results of the short-channel effects are compared with those in the conventional SOI MOSFETs. For given silicon body thicknesses, the shallow junction SOI devices exhibit the superior short-channel immunity over the conventional counterparts.</description><identifier>ISBN: 9781467348003</identifier><identifier>ISBN: 1467348007</identifier><identifier>EISBN: 1467348015</identifier><identifier>EISBN: 9781467348010</identifier><identifier>EISBN: 9781467348027</identifier><identifier>EISBN: 1467348023</identifier><identifier>DOI: 10.1109/ULIS.2013.6523530</identifier><language>eng</language><publisher>IEEE</publisher><subject>Fringing Field ; Logic gates ; MOSFET ; Shallow Source/Drain ; Short-Channel Effect ; Silicon-on-Insulator ; SOI MOSFETs ; Substrates</subject><ispartof>2013 14th International Conference on Ultimate Integration on Silicon (ULIS), 2013, p.129-132</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6523530$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6523530$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Jui-Kai Hsia</creatorcontrib><creatorcontrib>Chun-Hsing Shih</creatorcontrib><creatorcontrib>Ting-Shiuan Kang</creatorcontrib><creatorcontrib>Nguyen Dang Chien</creatorcontrib><creatorcontrib>Nguyen Van Kien</creatorcontrib><title>Fringing field and short channel effects in thin-body SOI MOSFETs with shallow source/drain</title><title>2013 14th International Conference on Ultimate Integration on Silicon (ULIS)</title><addtitle>ULIS</addtitle><description>This work explores numerically the short-channel effects in thin-body SOI MOSFETs with shallow source/drain architecture, where the junction depths are less than the associated silicon body thicknesses. Unique fringing field and short-channel behavior are observed in the unconventional SOI devices. Numerical results of the short-channel effects are compared with those in the conventional SOI MOSFETs. For given silicon body thicknesses, the shallow junction SOI devices exhibit the superior short-channel immunity over the conventional counterparts.</description><subject>Fringing Field</subject><subject>Logic gates</subject><subject>MOSFET</subject><subject>Shallow Source/Drain</subject><subject>Short-Channel Effect</subject><subject>Silicon-on-Insulator</subject><subject>SOI MOSFETs</subject><subject>Substrates</subject><isbn>9781467348003</isbn><isbn>1467348007</isbn><isbn>1467348015</isbn><isbn>9781467348010</isbn><isbn>9781467348027</isbn><isbn>1467348023</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2013</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1kM9Kw0AYxFdEUGseQLzsCyT99n_2KMVqoZJD9eShbDZfzErcSDZS-vZGrDAwM4ffHIaQWwYFY2CXr9vNruDARKEVF0rAGblmUhshS2DqnGTWlP8dxCXJUvoAgJk1YOQVeVuPIb7Pom3AvqEuNjR1wzhR37kYsafYtuinREOkUxdiXg_Nke6qDX2uduuHl0QPYepmxvX9cKBp-B49LpvRhXhDLlrXJ8xOviC_wOop31aPm9X9Ng8Wprw2EmypsLZccMFap6RUjeTC69KC18pogzVo4azn5ZyASa8d4xodai4W5O5vNSDi_msMn2487k9viB_shVHl</recordid><startdate>201303</startdate><enddate>201303</enddate><creator>Jui-Kai Hsia</creator><creator>Chun-Hsing Shih</creator><creator>Ting-Shiuan Kang</creator><creator>Nguyen Dang Chien</creator><creator>Nguyen Van Kien</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201303</creationdate><title>Fringing field and short channel effects in thin-body SOI MOSFETs with shallow source/drain</title><author>Jui-Kai Hsia ; Chun-Hsing Shih ; Ting-Shiuan Kang ; Nguyen Dang Chien ; Nguyen Van Kien</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-b740985eb923231fa5445d423c6890c65767eb063a9c28eb0014c6a126eae623</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Fringing Field</topic><topic>Logic gates</topic><topic>MOSFET</topic><topic>Shallow Source/Drain</topic><topic>Short-Channel Effect</topic><topic>Silicon-on-Insulator</topic><topic>SOI MOSFETs</topic><topic>Substrates</topic><toplevel>online_resources</toplevel><creatorcontrib>Jui-Kai Hsia</creatorcontrib><creatorcontrib>Chun-Hsing Shih</creatorcontrib><creatorcontrib>Ting-Shiuan Kang</creatorcontrib><creatorcontrib>Nguyen Dang Chien</creatorcontrib><creatorcontrib>Nguyen Van Kien</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore Digital Library</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Jui-Kai Hsia</au><au>Chun-Hsing Shih</au><au>Ting-Shiuan Kang</au><au>Nguyen Dang Chien</au><au>Nguyen Van Kien</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Fringing field and short channel effects in thin-body SOI MOSFETs with shallow source/drain</atitle><btitle>2013 14th International Conference on Ultimate Integration on Silicon (ULIS)</btitle><stitle>ULIS</stitle><date>2013-03</date><risdate>2013</risdate><spage>129</spage><epage>132</epage><pages>129-132</pages><isbn>9781467348003</isbn><isbn>1467348007</isbn><eisbn>1467348015</eisbn><eisbn>9781467348010</eisbn><eisbn>9781467348027</eisbn><eisbn>1467348023</eisbn><abstract>This work explores numerically the short-channel effects in thin-body SOI MOSFETs with shallow source/drain architecture, where the junction depths are less than the associated silicon body thicknesses. Unique fringing field and short-channel behavior are observed in the unconventional SOI devices. Numerical results of the short-channel effects are compared with those in the conventional SOI MOSFETs. For given silicon body thicknesses, the shallow junction SOI devices exhibit the superior short-channel immunity over the conventional counterparts.</abstract><pub>IEEE</pub><doi>10.1109/ULIS.2013.6523530</doi><tpages>4</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Fringing Field Logic gates MOSFET Shallow Source/Drain Short-Channel Effect Silicon-on-Insulator SOI MOSFETs Substrates |
| title | Fringing field and short channel effects in thin-body SOI MOSFETs with shallow source/drain |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-04T18%3A41%3A30IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Fringing%20field%20and%20short%20channel%20effects%20in%20thin-body%20SOI%20MOSFETs%20with%20shallow%20source/drain&rft.btitle=2013%2014th%20International%20Conference%20on%20Ultimate%20Integration%20on%20Silicon%20(ULIS)&rft.au=Jui-Kai%20Hsia&rft.date=2013-03&rft.spage=129&rft.epage=132&rft.pages=129-132&rft.isbn=9781467348003&rft.isbn_list=1467348007&rft_id=info:doi/10.1109/ULIS.2013.6523530&rft_dat=%3Cieee_6IE%3E6523530%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=1467348015&rft.eisbn_list=9781467348010&rft.eisbn_list=9781467348027&rft.eisbn_list=1467348023&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=6523530&rfr_iscdi=true |