Transient response characteristics of through silicon via in high resistivity silicon interposer
We investigated the transient response characteristic of through silicon via (TSV) in a high-resistivity silicon interposer. For this investigation, signal ground (SG)-TSV-chain pairs in high-resisitivity silicon (>1000 Ω·cm) were prepared. Various pulse waves (swing: -1.8-0 V or 0-+1.8 V, pulse...
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| creator | Watanabe, N. Ueda, C. Fujii, F. Akiyama, Y. Kikuchi, K. Kitamura, Y. Gomyo, T. Ookubo, T. Koyama, T. Kamada, T. Aoyagi, M. Otsuka, K. |
| description | We investigated the transient response characteristic of through silicon via (TSV) in a high-resistivity silicon interposer. For this investigation, signal ground (SG)-TSV-chain pairs in high-resisitivity silicon (>1000 Ω·cm) were prepared. Various pulse waves (swing: -1.8-0 V or 0-+1.8 V, pulse width: 250 ps-100 ms, duty ratio: 1/1) were applied to a SG-TSV-chain pair by using a pulse generator, and output signal was obtained using a sampling oscilloscope. From the rise and fall time of output signal, it was found that the change in transient response characteristic according to the frequency and voltage of the applied pulse wave was very small. This result demonstrates that the change in TSV capacitance with the input signal is very small and that high-resistivity silicon is effective for high speed signal processing. |
| doi_str_mv | 10.1109/ICSJ.2012.6523459 |
| format | Conference Proceeding |
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For this investigation, signal ground (SG)-TSV-chain pairs in high-resisitivity silicon (>1000 Ω·cm) were prepared. Various pulse waves (swing: -1.8-0 V or 0-+1.8 V, pulse width: 250 ps-100 ms, duty ratio: 1/1) were applied to a SG-TSV-chain pair by using a pulse generator, and output signal was obtained using a sampling oscilloscope. From the rise and fall time of output signal, it was found that the change in transient response characteristic according to the frequency and voltage of the applied pulse wave was very small. 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For this investigation, signal ground (SG)-TSV-chain pairs in high-resisitivity silicon (>1000 Ω·cm) were prepared. Various pulse waves (swing: -1.8-0 V or 0-+1.8 V, pulse width: 250 ps-100 ms, duty ratio: 1/1) were applied to a SG-TSV-chain pair by using a pulse generator, and output signal was obtained using a sampling oscilloscope. From the rise and fall time of output signal, it was found that the change in transient response characteristic according to the frequency and voltage of the applied pulse wave was very small. 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For this investigation, signal ground (SG)-TSV-chain pairs in high-resisitivity silicon (>1000 Ω·cm) were prepared. Various pulse waves (swing: -1.8-0 V or 0-+1.8 V, pulse width: 250 ps-100 ms, duty ratio: 1/1) were applied to a SG-TSV-chain pair by using a pulse generator, and output signal was obtained using a sampling oscilloscope. From the rise and fall time of output signal, it was found that the change in transient response characteristic according to the frequency and voltage of the applied pulse wave was very small. This result demonstrates that the change in TSV capacitance with the input signal is very small and that high-resistivity silicon is effective for high speed signal processing.</abstract><pub>IEEE</pub><doi>10.1109/ICSJ.2012.6523459</doi><tpages>4</tpages></addata></record> |
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| title | Transient response characteristics of through silicon via in high resistivity silicon interposer |
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