Physics of Multiple-Node Charge Collection and Impacts on Single-Event Characterization and Soft Error Rate Prediction

Physical mechanisms of single-event effects that result in multiple-node charge collection or charge sharing are reviewed and summarized. A historical overview of observed circuit responses is given that concentrates mainly on memory circuits. Memory devices with single-node upset mechanisms are sho...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE transactions on nuclear science 2013-06, Vol.60 (3), p.1836-1851
Hauptverfasser:	Black, J. D., Dodd, P. E., Warren, K. M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Charge sharing Integrated circuit modeling Junctions multiple bit upset multiple cell upset multiple-node charge collection Photoconductivity Silicon single-event testing SRAM cells technology computer-aided design Transistors
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!