DC and AC electrical characterization temperature dependence of Ag/Porous Silicon/p-Si/Al

We present DC and AC electrical characterization and temperature dependence of Ag/Porous Silicon/p-Si/Al structures to examine conduction mechanisms. Porous Silicon (PS) layers were manufactured by electrochemical etching in p-type wafer silicon. The dependence of resistance vs. temperature was stud...

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Bibliographische Detailangaben

Hauptverfasser:	Edward, S. O. O., Fonthal, R. F., Gilberto, M. B. P.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Capacitance Mathematical model Resistance Silicon Temperature dependence Temperature measurement Temperature sensors
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