Fully integrated single-inductor multiple-output (SIMO) DC-DC converter in CMOS 65 nm technology
In the nanoscale technologies, the on-chip Power Management design strategy as a part of a System on Chip (SoC) is becoming extremely important. This work presents a fully integrated SIMO converter in a CMOS 65 nm technology. Since passive components are also integrated and their values should resul...
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| creator | Soto, A. J. Lindstrom, E. O. Oliva, A. R. Mandolesi, P. S. Dualibe, F. C. |
| description | In the nanoscale technologies, the on-chip Power Management design strategy as a part of a System on Chip (SoC) is becoming extremely important. This work presents a fully integrated SIMO converter in a CMOS 65 nm technology. Since passive components are also integrated and their values should result relatively small the converter operates at a switching frequency of 200 MHz. This version counts with a step-up and a step-down outputs, but it can be easily extended to more otuputs. A suitable control strategy for high speed and nano-scale process together with system simulation results are discused. |
| doi_str_mv | 10.1109/LASCAS.2013.6519071 |
| format | Conference Proceeding |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Capacitors CMOS integrated circuits CMOS technology Inductors Switches System-on-chip Topology |
| title | Fully integrated single-inductor multiple-output (SIMO) DC-DC converter in CMOS 65 nm technology |
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