Microwave analysis of double barrier resonant tunneling diodes
Accurate microwave measurements up to 40 GHz have been carried out on GaAs/AlAs Double Barrier Resonant Tunneling (DBRT) diodes over the whole bias range of its DC characteristic. The resulting small-signal scattering parameters (S-parameters) have been analysed afterwards in terms of equivalent cir...
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| creator | Lepsa, M.I. Kwaspen, J.J.M. van de Roer, T.G. van der Vleuten, W. Kaufmann, L.M.F. |
| description | Accurate microwave measurements up to 40 GHz have been carried out on GaAs/AlAs Double Barrier Resonant Tunneling (DBRT) diodes over the whole bias range of its DC characteristic. The resulting small-signal scattering parameters (S-parameters) have been analysed afterwards in terms of equivalent circuits. The analysis demonstrates that the most suitable equivalent circuit of the DBRT structure has to include, apart from the circuit elements used to model the Esaki tunnel diode, an intrinsic inductance which is related to the life time of the quantum well quasi-state involved in the tunneling process. The bias dependency of the equivalent circuit parameters and the maximum oscillation frequency of the DBRT device have been obtained. |
| doi_str_mv | 10.1109/SMICND.1997.651172 |
| format | Conference Proceeding |
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The resulting small-signal scattering parameters (S-parameters) have been analysed afterwards in terms of equivalent circuits. The analysis demonstrates that the most suitable equivalent circuit of the DBRT structure has to include, apart from the circuit elements used to model the Esaki tunnel diode, an intrinsic inductance which is related to the life time of the quantum well quasi-state involved in the tunneling process. The bias dependency of the equivalent circuit parameters and the maximum oscillation frequency of the DBRT device have been obtained.</description><identifier>ISBN: 9780780338043</identifier><identifier>ISBN: 0780338049</identifier><identifier>DOI: 10.1109/SMICND.1997.651172</identifier><language>eng</language><publisher>IEEE</publisher><subject>Diodes ; Equivalent circuits ; Gallium arsenide ; Inductance ; Microwave devices ; Microwave measurements ; Microwave technology ; Probes ; Resonant tunneling devices ; Scattering parameters</subject><ispartof>1997 International Semiconductor Conference 20th Edition. 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The bias dependency of the equivalent circuit parameters and the maximum oscillation frequency of the DBRT device have been obtained.</description><subject>Diodes</subject><subject>Equivalent circuits</subject><subject>Gallium arsenide</subject><subject>Inductance</subject><subject>Microwave devices</subject><subject>Microwave measurements</subject><subject>Microwave technology</subject><subject>Probes</subject><subject>Resonant tunneling devices</subject><subject>Scattering parameters</subject><isbn>9780780338043</isbn><isbn>0780338049</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1997</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj81KAzEURgMiKHVeoKu8wIy5ySR3shFk_Cu0ulDXJZnckciYkaRV-vYW6seBszvwMbYE0QAIe_26WfXPdw1Yi43RACjPWGWxE0eU6kSrLlhVyqc4rtUaEC7ZzSYOef51P8RdctOhxMLnkYd57yfi3uUcKfNMZU4u7fhunxJNMX3wEOdA5Yqdj24qVP17wd4f7t_6p3r98rjqb9d1BNHuaimsHyWCCtp5CIioEUTAzgtpSKIRbrAGfWskWTSDtOMweKmg00GDUWrBlqduJKLtd45fLh-2p5PqDxpgR00</recordid><startdate>1997</startdate><enddate>1997</enddate><creator>Lepsa, M.I.</creator><creator>Kwaspen, J.J.M.</creator><creator>van de Roer, T.G.</creator><creator>van der Vleuten, W.</creator><creator>Kaufmann, L.M.F.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1997</creationdate><title>Microwave analysis of double barrier resonant tunneling diodes</title><author>Lepsa, M.I. ; Kwaspen, J.J.M. ; van de Roer, T.G. ; van der Vleuten, W. ; Kaufmann, L.M.F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i104t-209bf2713d5ab1d7775710d78b026e2760ac967b462e976c29fccb23185d51633</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Diodes</topic><topic>Equivalent circuits</topic><topic>Gallium arsenide</topic><topic>Inductance</topic><topic>Microwave devices</topic><topic>Microwave measurements</topic><topic>Microwave technology</topic><topic>Probes</topic><topic>Resonant tunneling devices</topic><topic>Scattering parameters</topic><toplevel>online_resources</toplevel><creatorcontrib>Lepsa, M.I.</creatorcontrib><creatorcontrib>Kwaspen, J.J.M.</creatorcontrib><creatorcontrib>van de Roer, T.G.</creatorcontrib><creatorcontrib>van der Vleuten, W.</creatorcontrib><creatorcontrib>Kaufmann, L.M.F.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lepsa, M.I.</au><au>Kwaspen, J.J.M.</au><au>van de Roer, T.G.</au><au>van der Vleuten, W.</au><au>Kaufmann, L.M.F.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Microwave analysis of double barrier resonant tunneling diodes</atitle><btitle>1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings</btitle><stitle>SMICND</stitle><date>1997</date><risdate>1997</risdate><volume>2</volume><spage>341</spage><epage>344 vol.2</epage><pages>341-344 vol.2</pages><isbn>9780780338043</isbn><isbn>0780338049</isbn><abstract>Accurate microwave measurements up to 40 GHz have been carried out on GaAs/AlAs Double Barrier Resonant Tunneling (DBRT) diodes over the whole bias range of its DC characteristic. The resulting small-signal scattering parameters (S-parameters) have been analysed afterwards in terms of equivalent circuits. The analysis demonstrates that the most suitable equivalent circuit of the DBRT structure has to include, apart from the circuit elements used to model the Esaki tunnel diode, an intrinsic inductance which is related to the life time of the quantum well quasi-state involved in the tunneling process. 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| identifier | ISBN: 9780780338043 |
| ispartof | 1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings, 1997, Vol.2, p.341-344 vol.2 |
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| language | eng |
| recordid | cdi_ieee_primary_651172 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Diodes Equivalent circuits Gallium arsenide Inductance Microwave devices Microwave measurements Microwave technology Probes Resonant tunneling devices Scattering parameters |
| title | Microwave analysis of double barrier resonant tunneling diodes |
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