Copper filling of TSVs for interposer applications

For the electrochemical filling of through silicon vias (TSVs) the geometry of these vias as well as their quantity on the wafer have a severe influence on the electrochemical process parameters, in particular on the current process time profile. So the electrochemical deposition (ECD) current was i...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Jurgensen, N., Huynh, Q. H., Engelmann, G., Ngo, H., Ehrmann, O., Lang, K., Uhlig, A., Dretschkow, T., Rohde, D., Worm, O., Jager, C.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Anodes Copper Current density Filling Geometry Surface treatment Through-silicon vias
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