A 1 million-cell 2.0-m/spl Omega/ 30-V TrenchFET utilizing 32 Mcell/in/sup 2/ density with distributed voltage clamping

A new concept to control TrenchFET avalanche breakdown using an evenly distributed array of voltage clamps in a 1-of-n cell arrangement is introduced, improving on-resistance without sacrificing device ruggedness. Using this technique, a 32 Mcell/in/sup 2/ (5 Mcell/cm/sup 2/) 30-V N-channel TrenchFE...

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Bibliographische Detailangaben

Hauptverfasser:	Williams, R.K., Grabowski, W., Darwish, M., Chang, M., Yilmaz, H., Owyang, K.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Avalanche breakdown Breakdown voltage Clamps Current density Current measurement Density measurement Electrical resistance measurement Packaging Predictive models Voltage control
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