Effects of ion bombardment on Na and Cl motion in SiO2 thin films

The effects of light and heavy ion bombardment on Na and Cl motion in SiO 2 thin films have been studied using proton-induced characteristic x-ray (PIX) and Rutherford backscattering (RBS) techniques. Results show that both Na and Cl atoms may be trapped in the oxides by implantation damage. Release...

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Veröffentlicht in:	IEEE transactions on nuclear science 1974-12, Vol.21 (6), p.62-66
1. Verfasser:	Beezhold, Wendland
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Backscatter Ionization Ions Protons Silicon Substrates
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