Effects of ion bombardment on Na and Cl motion in SiO2 thin films

The effects of light and heavy ion bombardment on Na and Cl motion in SiO 2 thin films have been studied using proton-induced characteristic x-ray (PIX) and Rutherford backscattering (RBS) techniques. Results show that both Na and Cl atoms may be trapped in the oxides by implantation damage. Release...

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Veröffentlicht in:	IEEE transactions on nuclear science 1974-12, Vol.21 (6), p.62-66
1. Verfasser:	Beezhold, Wendland
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Backscatter Ionization Ions Protons Silicon Substrates
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container_title	IEEE transactions on nuclear science
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creator	Beezhold, Wendland
description	The effects of light and heavy ion bombardment on Na and Cl motion in SiO 2 thin films have been studied using proton-induced characteristic x-ray (PIX) and Rutherford backscattering (RBS) techniques. Results show that both Na and Cl atoms may be trapped in the oxides by implantation damage. Release does not occur under ionizing irradiation (proton bombardment). Partial release or motion does occur after annealing to 700°C or by further heavy ion bombardments. Na motion is consistent with the movement of single Na + ions in the oxide. In contrast, the movement of Cl atoms appears to be dominated by enhanced Cl diffusion or by motion of positive Cl-defect complexes whenever heavy ion bombardment damage is introduced.
doi_str_mv	10.1109/TNS.1974.6498907
format	Article
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Results show that both Na and Cl atoms may be trapped in the oxides by implantation damage. Release does not occur under ionizing irradiation (proton bombardment). Partial release or motion does occur after annealing to 700°C or by further heavy ion bombardments. Na motion is consistent with the movement of single Na + ions in the oxide. 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Results show that both Na and Cl atoms may be trapped in the oxides by implantation damage. Release does not occur under ionizing irradiation (proton bombardment). Partial release or motion does occur after annealing to 700°C or by further heavy ion bombardments. Na motion is consistent with the movement of single Na + ions in the oxide. In contrast, the movement of Cl atoms appears to be dominated by enhanced Cl diffusion or by motion of positive Cl-defect complexes whenever heavy ion bombardment damage is introduced.</description><subject>Annealing</subject><subject>Backscatter</subject><subject>Ionization</subject><subject>Ions</subject><subject>Protons</subject><subject>Silicon</subject><subject>Substrates</subject><issn>0018-9499</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1974</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNotj0tLw0AUhWehYK3uBTfzBxLvncxzWULVQmkXresySe7gSB6SmY3_3ohdnfPxwYHD2BNCiQju5Xw4leiMLLV01oG5YSsAtIWTzt2x-5S-FpQK1IpttiFQmxOfAo_TyJtpaPzcDTRmvuDBcz92vO75MOU_H0d-ikfB8-fSQuyH9MBug-8TPV5zzT5et-f6vdgf33b1Zl9EBJULgUoI7R0GEK0naJxURAKMaQkkWK2qoLU2DWJbEUqQHtFKaVvfdcZX1Zo9_-9GIrp8z3Hw88_l-rD6Bf-vRJM</recordid><startdate>197412</startdate><enddate>197412</enddate><creator>Beezhold, Wendland</creator><general>IEEE</general><scope/></search><sort><creationdate>197412</creationdate><title>Effects of ion bombardment on Na and Cl motion in SiO2 thin films</title><author>Beezhold, Wendland</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i105t-215226a91f02cae0b945ee2077ce0408653f6667b11c3e1404a118448cadd7a33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1974</creationdate><topic>Annealing</topic><topic>Backscatter</topic><topic>Ionization</topic><topic>Ions</topic><topic>Protons</topic><topic>Silicon</topic><topic>Substrates</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Beezhold, Wendland</creatorcontrib><jtitle>IEEE transactions on nuclear science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Beezhold, Wendland</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of ion bombardment on Na and Cl motion in SiO2 thin films</atitle><jtitle>IEEE transactions on nuclear science</jtitle><stitle>TNS</stitle><date>1974-12</date><risdate>1974</risdate><volume>21</volume><issue>6</issue><spage>62</spage><epage>66</epage><pages>62-66</pages><issn>0018-9499</issn><coden>IETNAE</coden><abstract>The effects of light and heavy ion bombardment on Na and Cl motion in SiO 2 thin films have been studied using proton-induced characteristic x-ray (PIX) and Rutherford backscattering (RBS) techniques. Results show that both Na and Cl atoms may be trapped in the oxides by implantation damage. Release does not occur under ionizing irradiation (proton bombardment). Partial release or motion does occur after annealing to 700°C or by further heavy ion bombardments. Na motion is consistent with the movement of single Na + ions in the oxide. In contrast, the movement of Cl atoms appears to be dominated by enhanced Cl diffusion or by motion of positive Cl-defect complexes whenever heavy ion bombardment damage is introduced.</abstract><pub>IEEE</pub><doi>10.1109/TNS.1974.6498907</doi><tpages>5</tpages></addata></record>
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subjects	Annealing Backscatter Ionization Ions Protons Silicon Substrates
title	Effects of ion bombardment on Na and Cl motion in SiO2 thin films
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