Dynamic Analysis of Current-Voltage Characteristics of Nanoscale Gated-Thyristors
This letter presents a detailed experimental investigation of the current-voltage characteristics of deca-nanometer gated-thyristors, highlighting that strong differences exist between the static and the dynamic operation of these devices. In particular, results reveal that the forward-breakover vol...
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| Veröffentlicht in: | IEEE electron device letters 2013-05, Vol.34 (5), p.629-631 |
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| container_end_page | 631 |
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| container_title | IEEE electron device letters |
| container_volume | 34 |
| creator | Paolucci, Giovanni M. Compagnoni, Christian Monzio Castellani, Niccolo Carnevale, Gianpietro Fantini, Paolo Ventrice, Domenico Lacaita, Andrea L. Spinelli, Alessandro S. Benvenuti, Augusto |
| description | This letter presents a detailed experimental investigation of the current-voltage characteristics of deca-nanometer gated-thyristors, highlighting that strong differences exist between the static and the dynamic operation of these devices. In particular, results reveal that the forward-breakover voltage determining thyristor turn-on does not depend only on the applied gate voltage, but also on the rise time of the applied gate pulse, decreasing for fast pulse fronts. This is explained in terms of a higher electron injection from the cathode to the anode triggering device turn-on when the gate switching time is shorter than that required for holes to leave the p-base. |
| doi_str_mv | 10.1109/LED.2013.2253441 |
| format | Article |
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In particular, results reveal that the forward-breakover voltage determining thyristor turn-on does not depend only on the applied gate voltage, but also on the rise time of the applied gate pulse, decreasing for fast pulse fronts. This is explained in terms of a higher electron injection from the cathode to the anode triggering device turn-on when the gate switching time is shorter than that required for holes to leave the p-base.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2013.2253441</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Anodes ; Applied sciences ; Cathodes ; Charge carrier processes ; Electronics ; Exact sciences and technology ; Forward-breakover ; Logic gates ; Molecular electronics, nanoelectronics ; nanoscale semiconductor devices ; Other multijunction devices. Power transistors. Thyristors ; Semiconductor electronics. Microelectronics. Optoelectronics. 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In particular, results reveal that the forward-breakover voltage determining thyristor turn-on does not depend only on the applied gate voltage, but also on the rise time of the applied gate pulse, decreasing for fast pulse fronts. This is explained in terms of a higher electron injection from the cathode to the anode triggering device turn-on when the gate switching time is shorter than that required for holes to leave the p-base.</description><subject>Anodes</subject><subject>Applied sciences</subject><subject>Cathodes</subject><subject>Charge carrier processes</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Forward-breakover</subject><subject>Logic gates</subject><subject>Molecular electronics, nanoelectronics</subject><subject>nanoscale semiconductor devices</subject><subject>Other multijunction devices. Power transistors. Thyristors</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Power transistors. Thyristors</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>semiconductor-device modeling</topic><topic>Switches</topic><topic>Thyristors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Paolucci, Giovanni M.</creatorcontrib><creatorcontrib>Compagnoni, Christian Monzio</creatorcontrib><creatorcontrib>Castellani, Niccolo</creatorcontrib><creatorcontrib>Carnevale, Gianpietro</creatorcontrib><creatorcontrib>Fantini, Paolo</creatorcontrib><creatorcontrib>Ventrice, Domenico</creatorcontrib><creatorcontrib>Lacaita, Andrea L.</creatorcontrib><creatorcontrib>Spinelli, Alessandro S.</creatorcontrib><creatorcontrib>Benvenuti, Augusto</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Paolucci, Giovanni M.</au><au>Compagnoni, Christian Monzio</au><au>Castellani, Niccolo</au><au>Carnevale, Gianpietro</au><au>Fantini, Paolo</au><au>Ventrice, Domenico</au><au>Lacaita, Andrea L.</au><au>Spinelli, Alessandro S.</au><au>Benvenuti, Augusto</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Dynamic Analysis of Current-Voltage Characteristics of Nanoscale Gated-Thyristors</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2013-05-01</date><risdate>2013</risdate><volume>34</volume><issue>5</issue><spage>629</spage><epage>631</epage><pages>629-631</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>This letter presents a detailed experimental investigation of the current-voltage characteristics of deca-nanometer gated-thyristors, highlighting that strong differences exist between the static and the dynamic operation of these devices. In particular, results reveal that the forward-breakover voltage determining thyristor turn-on does not depend only on the applied gate voltage, but also on the rise time of the applied gate pulse, decreasing for fast pulse fronts. This is explained in terms of a higher electron injection from the cathode to the anode triggering device turn-on when the gate switching time is shorter than that required for holes to leave the p-base.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2013.2253441</doi><tpages>3</tpages></addata></record> |
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| subjects | Anodes Applied sciences Cathodes Charge carrier processes Electronics Exact sciences and technology Forward-breakover Logic gates Molecular electronics, nanoelectronics nanoscale semiconductor devices Other multijunction devices. Power transistors. Thyristors Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices semiconductor-device modeling Switches Thyristors |
| title | Dynamic Analysis of Current-Voltage Characteristics of Nanoscale Gated-Thyristors |
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