Insulating layer parameters are still in reduction of kink
Semiconductor devices using selective buried oxide (SELBOX) substrate is an area of promising technology that has the capacity to exhibit high performance and overcome the drawbacks of floating body effects that affect the SOI devices. This paper presents numerical simulation results of MOSFETs on S...
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creator | Agarwal, A. P. K. Pradhan, B. K. P. Mohapatra, C. S. K. Sahu, D. P. K. |
description | Semiconductor devices using selective buried oxide (SELBOX) substrate is an area of promising technology that has the capacity to exhibit high performance and overcome the drawbacks of floating body effects that affect the SOI devices. This paper presents numerical simulation results of MOSFETs on SELBOX structure and compares the electrical characteristics of device with those of devices on SOI and bulk silicon substrates. The simulation results show that the drain current kink effect, a physical phenomenon responsible for substrate floating body devices is completely suppressed above a certain drain voltage while preserving the useful advantages of SOI MOSFETs at the same time. The physical phenomenon responsible and method of minimizing kink effect with variation of different parameters is also specified. |
doi_str_mv | 10.1109/NUICONE.2012.6493247 |
format | Conference Proceeding |
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P. K. ; Pradhan, B. K. P. ; Mohapatra, C. S. K. ; Sahu, D. P. K.</creator><creatorcontrib>Agarwal, A. P. K. ; Pradhan, B. K. P. ; Mohapatra, C. S. K. ; Sahu, D. P. K.</creatorcontrib><description>Semiconductor devices using selective buried oxide (SELBOX) substrate is an area of promising technology that has the capacity to exhibit high performance and overcome the drawbacks of floating body effects that affect the SOI devices. This paper presents numerical simulation results of MOSFETs on SELBOX structure and compares the electrical characteristics of device with those of devices on SOI and bulk silicon substrates. The simulation results show that the drain current kink effect, a physical phenomenon responsible for substrate floating body devices is completely suppressed above a certain drain voltage while preserving the useful advantages of SOI MOSFETs at the same time. The physical phenomenon responsible and method of minimizing kink effect with variation of different parameters is also specified.</description><identifier>ISSN: 2375-1282</identifier><identifier>ISBN: 1467317209</identifier><identifier>ISBN: 9781467317207</identifier><identifier>EISBN: 9781467317191</identifier><identifier>EISBN: 1467317187</identifier><identifier>EISBN: 1467317195</identifier><identifier>EISBN: 9781467317184</identifier><identifier>DOI: 10.1109/NUICONE.2012.6493247</identifier><language>eng</language><publisher>IEEE</publisher><subject>Device Simulation ; floating body effects ; PD-SOI ; SELBOX Substrate ; SILVACO</subject><ispartof>2012 Nirma University International Conference on Engineering (NUiCONE), 2012, p.1-4</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6493247$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2057,27924,54919</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6493247$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Agarwal, A. P. K.</creatorcontrib><creatorcontrib>Pradhan, B. K. P.</creatorcontrib><creatorcontrib>Mohapatra, C. S. K.</creatorcontrib><creatorcontrib>Sahu, D. P. K.</creatorcontrib><title>Insulating layer parameters are still in reduction of kink</title><title>2012 Nirma University International Conference on Engineering (NUiCONE)</title><addtitle>NUICONE</addtitle><description>Semiconductor devices using selective buried oxide (SELBOX) substrate is an area of promising technology that has the capacity to exhibit high performance and overcome the drawbacks of floating body effects that affect the SOI devices. This paper presents numerical simulation results of MOSFETs on SELBOX structure and compares the electrical characteristics of device with those of devices on SOI and bulk silicon substrates. The simulation results show that the drain current kink effect, a physical phenomenon responsible for substrate floating body devices is completely suppressed above a certain drain voltage while preserving the useful advantages of SOI MOSFETs at the same time. The physical phenomenon responsible and method of minimizing kink effect with variation of different parameters is also specified.</description><subject>Device Simulation</subject><subject>floating body effects</subject><subject>PD-SOI</subject><subject>SELBOX Substrate</subject><subject>SILVACO</subject><issn>2375-1282</issn><isbn>1467317209</isbn><isbn>9781467317207</isbn><isbn>9781467317191</isbn><isbn>1467317187</isbn><isbn>1467317195</isbn><isbn>9781467317184</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2012</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj8tOwzAURI0AibbkC2DhH0i4thM_2KGoQKSq3bTryk6ukWmaVna66N-jiixGo7MZnSHklUHBGJi39a6pN-tlwYHxQpZG8FLdkcwozUqpBFPMsHsyn4CDeSAzLlSVM675E8lS-gUAwbQ2IGfkvRnSpbdjGH5ob68Y6dlGe8QRY6I2Ik1j6HsaBhqxu7RjOA305OkhDIdn8uhtnzCbekF2n8tt_Z2vNl9N_bHKA1PVmOvWO1DGedcJ6VFWUBp0HLXuwAhEqTpf3qKNkq323HUAEp10VtxExYK8_O8GRNyfYzjaeN1P18UfHAlLrg</recordid><startdate>201212</startdate><enddate>201212</enddate><creator>Agarwal, A. P. K.</creator><creator>Pradhan, B. K. P.</creator><creator>Mohapatra, C. S. K.</creator><creator>Sahu, D. P. K.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201212</creationdate><title>Insulating layer parameters are still in reduction of kink</title><author>Agarwal, A. P. K. ; Pradhan, B. K. P. ; Mohapatra, C. S. K. ; Sahu, D. P. K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-8cfb079bfbd36fe65049eb2e88d093ee67df47df48976c8f2bd006eb6ba300313</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Device Simulation</topic><topic>floating body effects</topic><topic>PD-SOI</topic><topic>SELBOX Substrate</topic><topic>SILVACO</topic><toplevel>online_resources</toplevel><creatorcontrib>Agarwal, A. P. K.</creatorcontrib><creatorcontrib>Pradhan, B. K. P.</creatorcontrib><creatorcontrib>Mohapatra, C. S. K.</creatorcontrib><creatorcontrib>Sahu, D. P. K.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Agarwal, A. P. K.</au><au>Pradhan, B. K. P.</au><au>Mohapatra, C. S. K.</au><au>Sahu, D. P. K.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Insulating layer parameters are still in reduction of kink</atitle><btitle>2012 Nirma University International Conference on Engineering (NUiCONE)</btitle><stitle>NUICONE</stitle><date>2012-12</date><risdate>2012</risdate><spage>1</spage><epage>4</epage><pages>1-4</pages><issn>2375-1282</issn><isbn>1467317209</isbn><isbn>9781467317207</isbn><eisbn>9781467317191</eisbn><eisbn>1467317187</eisbn><eisbn>1467317195</eisbn><eisbn>9781467317184</eisbn><abstract>Semiconductor devices using selective buried oxide (SELBOX) substrate is an area of promising technology that has the capacity to exhibit high performance and overcome the drawbacks of floating body effects that affect the SOI devices. This paper presents numerical simulation results of MOSFETs on SELBOX structure and compares the electrical characteristics of device with those of devices on SOI and bulk silicon substrates. The simulation results show that the drain current kink effect, a physical phenomenon responsible for substrate floating body devices is completely suppressed above a certain drain voltage while preserving the useful advantages of SOI MOSFETs at the same time. The physical phenomenon responsible and method of minimizing kink effect with variation of different parameters is also specified.</abstract><pub>IEEE</pub><doi>10.1109/NUICONE.2012.6493247</doi><tpages>4</tpages></addata></record> |
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subjects | Device Simulation floating body effects PD-SOI SELBOX Substrate SILVACO |
title | Insulating layer parameters are still in reduction of kink |
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