Fluorine improvement of MOSFET interface as revealed by RTS measurements and HRTEM
The MOSFET flicker (1/f) noise is reduced by 1 to 2 orders by incorporating fluorine into the oxide-silicon interface. This is attributed to a reduction in interface state density with fluorine as confirmed by charge pumping measurements. Random-Telegraph Signal (RTS) noise measurements on small-siz...
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| creator | Joo Hyung Kim Jung Joo Kim Chang Eun Lee Jong Ho Lee Dong Seok Kim Nam Joo Kim Kwang Dong Yoo Heung Soo Park |
| description | The MOSFET flicker (1/f) noise is reduced by 1 to 2 orders by incorporating fluorine into the oxide-silicon interface. This is attributed to a reduction in interface state density with fluorine as confirmed by charge pumping measurements. Random-Telegraph Signal (RTS) noise measurements on small-size MOSFETs show a considerable increase in the on-off time-constants with fluorine. High-resolution TEM micrographs show the presence of an interface transition layer on samples without fluorine but not with fluorine. It is believed that a transformation of this layer causes a reduction in noise and an increase in oxide thickness. |
| doi_str_mv | 10.1109/PAWR.2013.6490189 |
| format | Conference Proceeding |
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This is attributed to a reduction in interface state density with fluorine as confirmed by charge pumping measurements. Random-Telegraph Signal (RTS) noise measurements on small-size MOSFETs show a considerable increase in the on-off time-constants with fluorine. High-resolution TEM micrographs show the presence of an interface transition layer on samples without fluorine but not with fluorine. 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This is attributed to a reduction in interface state density with fluorine as confirmed by charge pumping measurements. Random-Telegraph Signal (RTS) noise measurements on small-size MOSFETs show a considerable increase in the on-off time-constants with fluorine. High-resolution TEM micrographs show the presence of an interface transition layer on samples without fluorine but not with fluorine. It is believed that a transformation of this layer causes a reduction in noise and an increase in oxide thickness.</description><subject>1/f noise</subject><subject>Boron</subject><subject>Charge pumps</subject><subject>fluorine</subject><subject>Logic gates</subject><subject>MOSFET</subject><subject>Noise</subject><subject>RTS noise</subject><subject>Silicon</subject><isbn>9781467329156</isbn><isbn>1467329150</isbn><isbn>1467329185</isbn><isbn>9781467329187</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2013</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1kNtKAzEYhCMiqHUfQLzJC2zNYXO6LKW1Qktlu-JlSdw_ENlDSbaFvr1LrVfDwHzDMAg9UzKllJjXj9lXOWWE8qksDKHa3KBHWkjFmaFa3KLMKP3vhbxHWUo_hJCRlVrJB1Qum2MfQwc4tIfYn6CFbsC9x5vtbrmocOgGiN5-A7YJRziBbaDG7ozLaodbsOkYL0jCtqvxqqwWmyd0522TILvqBH2OTfNVvt6-vc9n6zxQJYacKvBcez6udoSBFHVtCsOUBcY8VdIxp5lShdTaFk54bseI41YYWjsiNJ-gl7_eAAD7Qwytjef99Qb-C2h-T2g</recordid><startdate>201301</startdate><enddate>201301</enddate><creator>Joo Hyung Kim</creator><creator>Jung Joo Kim</creator><creator>Chang Eun Lee</creator><creator>Jong Ho Lee</creator><creator>Dong Seok Kim</creator><creator>Nam Joo Kim</creator><creator>Kwang Dong Yoo</creator><creator>Heung Soo Park</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201301</creationdate><title>Fluorine improvement of MOSFET interface as revealed by RTS measurements and HRTEM</title><author>Joo Hyung Kim ; Jung Joo Kim ; Chang Eun Lee ; Jong Ho Lee ; Dong Seok Kim ; Nam Joo Kim ; Kwang Dong Yoo ; Heung Soo Park</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-17ef38f3901b02e65dd94927ae22f176b2b82774688a4b5f3a65db3a591db0583</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2013</creationdate><topic>1/f noise</topic><topic>Boron</topic><topic>Charge pumps</topic><topic>fluorine</topic><topic>Logic gates</topic><topic>MOSFET</topic><topic>Noise</topic><topic>RTS noise</topic><topic>Silicon</topic><toplevel>online_resources</toplevel><creatorcontrib>Joo Hyung Kim</creatorcontrib><creatorcontrib>Jung Joo Kim</creatorcontrib><creatorcontrib>Chang Eun Lee</creatorcontrib><creatorcontrib>Jong Ho Lee</creatorcontrib><creatorcontrib>Dong Seok Kim</creatorcontrib><creatorcontrib>Nam Joo Kim</creatorcontrib><creatorcontrib>Kwang Dong Yoo</creatorcontrib><creatorcontrib>Heung Soo Park</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Joo Hyung Kim</au><au>Jung Joo Kim</au><au>Chang Eun Lee</au><au>Jong Ho Lee</au><au>Dong Seok Kim</au><au>Nam Joo Kim</au><au>Kwang Dong Yoo</au><au>Heung Soo Park</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Fluorine improvement of MOSFET interface as revealed by RTS measurements and HRTEM</atitle><btitle>2013 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications</btitle><stitle>PAWR</stitle><date>2013-01</date><risdate>2013</risdate><spage>61</spage><epage>63</epage><pages>61-63</pages><isbn>9781467329156</isbn><isbn>1467329150</isbn><eisbn>1467329185</eisbn><eisbn>9781467329187</eisbn><abstract>The MOSFET flicker (1/f) noise is reduced by 1 to 2 orders by incorporating fluorine into the oxide-silicon interface. This is attributed to a reduction in interface state density with fluorine as confirmed by charge pumping measurements. Random-Telegraph Signal (RTS) noise measurements on small-size MOSFETs show a considerable increase in the on-off time-constants with fluorine. High-resolution TEM micrographs show the presence of an interface transition layer on samples without fluorine but not with fluorine. It is believed that a transformation of this layer causes a reduction in noise and an increase in oxide thickness.</abstract><pub>IEEE</pub><doi>10.1109/PAWR.2013.6490189</doi><tpages>3</tpages></addata></record> |
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| language | eng |
| recordid | cdi_ieee_primary_6490189 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | 1/f noise Boron Charge pumps fluorine Logic gates MOSFET Noise RTS noise Silicon |
| title | Fluorine improvement of MOSFET interface as revealed by RTS measurements and HRTEM |
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