A reliability-based AlGaN/GaN HEMT model considering high drain bias voltage RF ageing
Reliability knowledge of AlGaN/GaN High Electron Mobility Transistors (HEMT) remains a major challenge to provide safe power devices. In order to understand degradation mechanisms related to this technology, accurate life tests must be performed. In this paper, saturated-pulsed-RF stress tests at en...
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| creator | Fonder, J. Duperrier, C. Latry, O. Stanislawiak, M. Maanane, H. Eudeline, P. Temcamani, F. |
| description | Reliability knowledge of AlGaN/GaN High Electron Mobility Transistors (HEMT) remains a major challenge to provide safe power devices. In order to understand degradation mechanisms related to this technology, accurate life tests must be performed. In this paper, saturated-pulsed-RF stress tests at enhanced drain bias voltage are performed on an AlGaN/GaN HEMT based power amplifier. These tests have permitted to highlight the device's parameters responsible for the performance drop. Finally, they have been included in a large signal HEMT model to predict the power amplifier behavior under enhanced drain bias voltage operation. Results on a 45V drain bias voltage ageing test and the way to integrate them in a large signal model are discussed. Then, measured and simulated amplifier performances are compared. |
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In order to understand degradation mechanisms related to this technology, accurate life tests must be performed. In this paper, saturated-pulsed-RF stress tests at enhanced drain bias voltage are performed on an AlGaN/GaN HEMT based power amplifier. These tests have permitted to highlight the device's parameters responsible for the performance drop. Finally, they have been included in a large signal HEMT model to predict the power amplifier behavior under enhanced drain bias voltage operation. Results on a 45V drain bias voltage ageing test and the way to integrate them in a large signal model are discussed. Then, measured and simulated amplifier performances are compared.</description><identifier>ISBN: 9781467323024</identifier><identifier>ISBN: 1467323020</identifier><identifier>EISBN: 9782874870262</identifier><identifier>EISBN: 2874870285</identifier><identifier>EISBN: 9782874870286</identifier><identifier>EISBN: 2874870269</identifier><language>eng</language><publisher>IEEE</publisher><subject>Aging ; Current measurement ; Gallium nitride ; HEMTs ; large signal model ; Power amplifiers ; Power generation ; Radio frequency ; reliability</subject><ispartof>2012 7th European Microwave Integrated Circuit Conference, 2012, p.72-75</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6483738$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2056,54919</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6483738$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Fonder, J.</creatorcontrib><creatorcontrib>Duperrier, C.</creatorcontrib><creatorcontrib>Latry, O.</creatorcontrib><creatorcontrib>Stanislawiak, M.</creatorcontrib><creatorcontrib>Maanane, H.</creatorcontrib><creatorcontrib>Eudeline, P.</creatorcontrib><creatorcontrib>Temcamani, F.</creatorcontrib><title>A reliability-based AlGaN/GaN HEMT model considering high drain bias voltage RF ageing</title><title>2012 7th European Microwave Integrated Circuit Conference</title><addtitle>EuMIC</addtitle><description>Reliability knowledge of AlGaN/GaN High Electron Mobility Transistors (HEMT) remains a major challenge to provide safe power devices. In order to understand degradation mechanisms related to this technology, accurate life tests must be performed. In this paper, saturated-pulsed-RF stress tests at enhanced drain bias voltage are performed on an AlGaN/GaN HEMT based power amplifier. These tests have permitted to highlight the device's parameters responsible for the performance drop. Finally, they have been included in a large signal HEMT model to predict the power amplifier behavior under enhanced drain bias voltage operation. Results on a 45V drain bias voltage ageing test and the way to integrate them in a large signal model are discussed. Then, measured and simulated amplifier performances are compared.</description><subject>Aging</subject><subject>Current measurement</subject><subject>Gallium nitride</subject><subject>HEMTs</subject><subject>large signal model</subject><subject>Power amplifiers</subject><subject>Power generation</subject><subject>Radio frequency</subject><subject>reliability</subject><isbn>9781467323024</isbn><isbn>1467323020</isbn><isbn>9782874870262</isbn><isbn>2874870285</isbn><isbn>9782874870286</isbn><isbn>2874870269</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2012</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotjF1LwzAYRiMiKFt_gTf5A8V8J70sYx_CVJDN2_GmedtFslaaIuzfW9SLw-HAw3NDiso64axylgkjbn-bK2OlkEyoe1Lk_MkY45wZafkD-ajpiCmCjylO19JDxkDrtIXXpxm6W78c6GUImGgz9DkGHGPf0XPszjSMEHvqI2T6PaQJOqTvGzprXizJXQspY_HvBTlu1ofVrty_bZ9X9b6MnOmpdFYaAQo5D947jcCAN1orKVuJQmhdBSOaxghruTWVtw4qLbTxPOiWGy0X5PHvNyLi6WuMFxivJ6OctNLJH-CISv4</recordid><startdate>201210</startdate><enddate>201210</enddate><creator>Fonder, J.</creator><creator>Duperrier, C.</creator><creator>Latry, O.</creator><creator>Stanislawiak, M.</creator><creator>Maanane, H.</creator><creator>Eudeline, P.</creator><creator>Temcamani, F.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201210</creationdate><title>A reliability-based AlGaN/GaN HEMT model considering high drain bias voltage RF ageing</title><author>Fonder, J. ; Duperrier, C. ; Latry, O. ; Stanislawiak, M. ; Maanane, H. ; Eudeline, P. ; Temcamani, F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i105t-87362a4e11dbb85ea0a1c55433f3e22559d62cc62771769b78a95256b1d5f1653</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Aging</topic><topic>Current measurement</topic><topic>Gallium nitride</topic><topic>HEMTs</topic><topic>large signal model</topic><topic>Power amplifiers</topic><topic>Power generation</topic><topic>Radio frequency</topic><topic>reliability</topic><toplevel>online_resources</toplevel><creatorcontrib>Fonder, J.</creatorcontrib><creatorcontrib>Duperrier, C.</creatorcontrib><creatorcontrib>Latry, O.</creatorcontrib><creatorcontrib>Stanislawiak, M.</creatorcontrib><creatorcontrib>Maanane, H.</creatorcontrib><creatorcontrib>Eudeline, P.</creatorcontrib><creatorcontrib>Temcamani, F.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Fonder, J.</au><au>Duperrier, C.</au><au>Latry, O.</au><au>Stanislawiak, M.</au><au>Maanane, H.</au><au>Eudeline, P.</au><au>Temcamani, F.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A reliability-based AlGaN/GaN HEMT model considering high drain bias voltage RF ageing</atitle><btitle>2012 7th European Microwave Integrated Circuit Conference</btitle><stitle>EuMIC</stitle><date>2012-10</date><risdate>2012</risdate><spage>72</spage><epage>75</epage><pages>72-75</pages><isbn>9781467323024</isbn><isbn>1467323020</isbn><eisbn>9782874870262</eisbn><eisbn>2874870285</eisbn><eisbn>9782874870286</eisbn><eisbn>2874870269</eisbn><abstract>Reliability knowledge of AlGaN/GaN High Electron Mobility Transistors (HEMT) remains a major challenge to provide safe power devices. In order to understand degradation mechanisms related to this technology, accurate life tests must be performed. In this paper, saturated-pulsed-RF stress tests at enhanced drain bias voltage are performed on an AlGaN/GaN HEMT based power amplifier. These tests have permitted to highlight the device's parameters responsible for the performance drop. Finally, they have been included in a large signal HEMT model to predict the power amplifier behavior under enhanced drain bias voltage operation. Results on a 45V drain bias voltage ageing test and the way to integrate them in a large signal model are discussed. Then, measured and simulated amplifier performances are compared.</abstract><pub>IEEE</pub><tpages>4</tpages></addata></record> |
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| subjects | Aging Current measurement Gallium nitride HEMTs large signal model Power amplifiers Power generation Radio frequency reliability |
| title | A reliability-based AlGaN/GaN HEMT model considering high drain bias voltage RF ageing |
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