Voltage and Current Modulation at 20 Gb/s of a Transistor Laser at Room Temperature

Data are presented showing open-eye 20-Gb/s transmission for a quantum-well transistor laser operating at room temperature (25°C). The fast spontaneous recombination lifetime (~ 30 ps) in the base region results in a resonance-free frequency response allowing demonstration of 20-Gb/s transmission wi...

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Veröffentlicht in:	IEEE photonics technology letters 2013-05, Vol.25 (9), p.859-862
Hauptverfasser:	Bambery, R., Fei Tan, Feng, Milton, Dallesasse, J. M., Holonyak, N.
Format:	Artikel
Sprache:	eng
Schlagworte:	20-Gb/s modulation Bandwidth high speed High-speed optical techniques laser Modulation photon-assisted tunneling Photonics transistor Transistors Vertical cavity surface emitting lasers voltage modulation
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