Voltage and Current Modulation at 20 Gb/s of a Transistor Laser at Room Temperature
Data are presented showing open-eye 20-Gb/s transmission for a quantum-well transistor laser operating at room temperature (25°C). The fast spontaneous recombination lifetime (~ 30 ps) in the base region results in a resonance-free frequency response allowing demonstration of 20-Gb/s transmission wi...
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| Veröffentlicht in: | IEEE photonics technology letters 2013-05, Vol.25 (9), p.859-862 |
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| container_end_page | 862 |
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| container_issue | 9 |
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| container_title | IEEE photonics technology letters |
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| creator | Bambery, R. Fei Tan Feng, Milton Dallesasse, J. M. Holonyak, N. |
| description | Data are presented showing open-eye 20-Gb/s transmission for a quantum-well transistor laser operating at room temperature (25°C). The fast spontaneous recombination lifetime (~ 30 ps) in the base region results in a resonance-free frequency response allowing demonstration of 20-Gb/s transmission with an I/I TH =3. It is shown that higher temperature hastens the transition to the first excited state and improves bandwidth and eye-opening at low bias levels (I/I TH =2). In addition, room temperature 20-Gb/s transmission through voltage modulation of a transistor laser via intracavity photon-assisted tunneling in the base-collector junction is reported. |
| doi_str_mv | 10.1109/LPT.2013.2252887 |
| format | Article |
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M.</creatorcontrib><creatorcontrib>Holonyak, N.</creatorcontrib><title>Voltage and Current Modulation at 20 Gb/s of a Transistor Laser at Room Temperature</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description>Data are presented showing open-eye 20-Gb/s transmission for a quantum-well transistor laser operating at room temperature (25°C). The fast spontaneous recombination lifetime (~ 30 ps) in the base region results in a resonance-free frequency response allowing demonstration of 20-Gb/s transmission with an I/I TH =3. It is shown that higher temperature hastens the transition to the first excited state and improves bandwidth and eye-opening at low bias levels (I/I TH =2). In addition, room temperature 20-Gb/s transmission through voltage modulation of a transistor laser via intracavity photon-assisted tunneling in the base-collector junction is reported.</description><subject>20-Gb/s modulation</subject><subject>Bandwidth</subject><subject>high speed</subject><subject>High-speed optical techniques</subject><subject>laser</subject><subject>Modulation</subject><subject>photon-assisted tunneling</subject><subject>Photonics</subject><subject>transistor</subject><subject>Transistors</subject><subject>Vertical cavity surface emitting lasers</subject><subject>voltage modulation</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kFFLwzAUhYMoOKfvgi_5A-1yk3RNH2XoFCqKVl_LbXMjla0ZSfbgv7djQzhwz8M5l8PH2C2IHEBUi_qtyaUAlUtZSGPKMzaDSkMmoNTnkxeTB1DFJbuK8UcI0IXSM_bx5TcJv4njaPlqHwKNib94u99gGvzIMXEp-LpbRO4dR94EHOMQkw-8xkjhEHj3fssb2u4oYNoHumYXDjeRbk53zj4fH5rVU1a_rp9X93XWy6VKGdlOlTCpMtOUSpmqBLJopHPGOqmrHhG6Qi0doqiUhF4gOrRakzG269WciePfPvgYA7l2F4Ytht8WRHuA0k5Q2gOU9gRlqtwdKwMR_ceX2ojSGPUHgXldcA</recordid><startdate>20130501</startdate><enddate>20130501</enddate><creator>Bambery, R.</creator><creator>Fei Tan</creator><creator>Feng, Milton</creator><creator>Dallesasse, J. 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M. ; Holonyak, N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c263t-edb37137198534938971eda82ff8df249caa1b536faa09321c0aafad44e88dbc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>20-Gb/s modulation</topic><topic>Bandwidth</topic><topic>high speed</topic><topic>High-speed optical techniques</topic><topic>laser</topic><topic>Modulation</topic><topic>photon-assisted tunneling</topic><topic>Photonics</topic><topic>transistor</topic><topic>Transistors</topic><topic>Vertical cavity surface emitting lasers</topic><topic>voltage modulation</topic><toplevel>online_resources</toplevel><creatorcontrib>Bambery, R.</creatorcontrib><creatorcontrib>Fei Tan</creatorcontrib><creatorcontrib>Feng, Milton</creatorcontrib><creatorcontrib>Dallesasse, J. M.</creatorcontrib><creatorcontrib>Holonyak, N.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Bambery, R.</au><au>Fei Tan</au><au>Feng, Milton</au><au>Dallesasse, J. M.</au><au>Holonyak, N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Voltage and Current Modulation at 20 Gb/s of a Transistor Laser at Room Temperature</atitle><jtitle>IEEE photonics technology letters</jtitle><stitle>LPT</stitle><date>2013-05-01</date><risdate>2013</risdate><volume>25</volume><issue>9</issue><spage>859</spage><epage>862</epage><pages>859-862</pages><issn>1041-1135</issn><eissn>1941-0174</eissn><coden>IPTLEL</coden><abstract>Data are presented showing open-eye 20-Gb/s transmission for a quantum-well transistor laser operating at room temperature (25°C). The fast spontaneous recombination lifetime (~ 30 ps) in the base region results in a resonance-free frequency response allowing demonstration of 20-Gb/s transmission with an I/I TH =3. It is shown that higher temperature hastens the transition to the first excited state and improves bandwidth and eye-opening at low bias levels (I/I TH =2). In addition, room temperature 20-Gb/s transmission through voltage modulation of a transistor laser via intracavity photon-assisted tunneling in the base-collector junction is reported.</abstract><pub>IEEE</pub><doi>10.1109/LPT.2013.2252887</doi><tpages>4</tpages></addata></record> |
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| ispartof | IEEE photonics technology letters, 2013-05, Vol.25 (9), p.859-862 |
| issn | 1041-1135 1941-0174 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | 20-Gb/s modulation Bandwidth high speed High-speed optical techniques laser Modulation photon-assisted tunneling Photonics transistor Transistors Vertical cavity surface emitting lasers voltage modulation |
| title | Voltage and Current Modulation at 20 Gb/s of a Transistor Laser at Room Temperature |
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