Sub-30nm scaling and high-speed operation of fully-confined Access-Devices for 3D crosspoint memory based on mixed-ionic-electronic-conduction (MIEC) materials
BEOL-friendly Access Devices (AD) based on Cu-containing MIEC materials [1-3] are shown to scale to the
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| creator | Virwani, K. Burr, G. W. Shenoy, R. S. Rettner, C. T. Padilla, A. Topuria, T. Rice, P. M. Ho, G. King, R. S. Nguyen, K. Bowers, A. N. Jurich, M. BrightSky, M. Joseph, E. A. Kellock, A. J. Arellano, N. Kurdi, B. N. Gopalakrishnan, K. |
| description | BEOL-friendly Access Devices (AD) based on Cu-containing MIEC materials [1-3] are shown to scale to the |
| doi_str_mv | 10.1109/IEDM.2012.6478967 |
| format | Conference Proceeding |
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N.</creatorcontrib><creatorcontrib>Gopalakrishnan, K.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library Online</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Virwani, K.</au><au>Burr, G. W.</au><au>Shenoy, R. S.</au><au>Rettner, C. T.</au><au>Padilla, A.</au><au>Topuria, T.</au><au>Rice, P. M.</au><au>Ho, G.</au><au>King, R. S.</au><au>Nguyen, K.</au><au>Bowers, A. N.</au><au>Jurich, M.</au><au>BrightSky, M.</au><au>Joseph, E. A.</au><au>Kellock, A. J.</au><au>Arellano, N.</au><au>Kurdi, B. N.</au><au>Gopalakrishnan, K.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Sub-30nm scaling and high-speed operation of fully-confined Access-Devices for 3D crosspoint memory based on mixed-ionic-electronic-conduction (MIEC) materials</atitle><btitle>2012 International Electron Devices Meeting</btitle><stitle>IEDM</stitle><date>2012-12</date><risdate>2012</risdate><spage>2.7.1</spage><epage>2.7.4</epage><pages>2.7.1-2.7.4</pages><issn>0163-1918</issn><eissn>2156-017X</eissn><isbn>9781467348720</isbn><isbn>1467348724</isbn><eisbn>1467348716</eisbn><eisbn>9781467348706</eisbn><eisbn>1467348708</eisbn><eisbn>9781467348713</eisbn><abstract>BEOL-friendly Access Devices (AD) based on Cu-containing MIEC materials [1-3] are shown to scale to the <;30nm CDs and <;12nm thicknesses found in advanced technology nodes. Switching speeds at the high (>100uA) currents of NVM writes can reach 15ns; NVM reads at typical (~5uA) current levels can be ≪1usec.</abstract><pub>IEEE</pub><doi>10.1109/IEDM.2012.6478967</doi></addata></record> |
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| identifier | ISSN: 0163-1918 |
| ispartof | 2012 International Electron Devices Meeting, 2012, p.2.7.1-2.7.4 |
| issn | 0163-1918 2156-017X |
| language | eng |
| recordid | cdi_ieee_primary_6478967 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Current measurement Nonvolatile memory Phase change materials Pulse measurements Switches Voltage measurement |
| title | Sub-30nm scaling and high-speed operation of fully-confined Access-Devices for 3D crosspoint memory based on mixed-ionic-electronic-conduction (MIEC) materials |
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