Sub-30nm scaling and high-speed operation of fully-confined Access-Devices for 3D crosspoint memory based on mixed-ionic-electronic-conduction (MIEC) materials

Sub-30nm scaling and high-speed operation of fully-confined Access-Devices for 3D crosspoint memory based on mixed-ionic-electronic-conduction (MIEC) materials

BEOL-friendly Access Devices (AD) based on Cu-containing MIEC materials [1-3] are shown to scale to the

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Bibliographische Detailangaben
Hauptverfasser: Virwani, K., Burr, G. W., Shenoy, R. S., Rettner, C. T., Padilla, A., Topuria, T., Rice, P. M., Ho, G., King, R. S., Nguyen, K., Bowers, A. N., Jurich, M., BrightSky, M., Joseph, E. A., Kellock, A. J., Arellano, N., Kurdi, B. N., Gopalakrishnan, K.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Current measurement
Nonvolatile memory
Phase change materials
Pulse measurements
Switches
Voltage measurement
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Beschreibung
Zusammenfassung:BEOL-friendly Access Devices (AD) based on Cu-containing MIEC materials [1-3] are shown to scale to the
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2012.6478967