Drie of fused silica
This paper reports detailed characterization results of deep reactive ion etching of fused silica with three different masking materials: single-crystal Si, negative photoresist KMPR and SU-8. With an optimized etch recipe, KMPR and SU-8 show higher effective mask selectivity, are easier to integrat...
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| creator | Zongliang Cao VanDerElzen, B. Owen, K. J. Jialiang Yan Guohong He Peterson, R. L. Grimard, D. Najafi, K. |
| description | This paper reports detailed characterization results of deep reactive ion etching of fused silica with three different masking materials: single-crystal Si, negative photoresist KMPR and SU-8. With an optimized etch recipe, KMPR and SU-8 show higher effective mask selectivity, are easier to integrate and remove than Si, making them better masks for creating high-aspect ratio features. Using a KMPR mask, a high aspect ratio (8:1) etch with a 6-μm mask opening is obtained. SU-8 masks also achieve high aspect ratios of 4.5:1 for 20-μm wide trenches, with mask selectivity of ~2:1. However the polymeric masks cause greater FS sidewall roughness. |
| doi_str_mv | 10.1109/MEMSYS.2013.6474253 |
| format | Conference Proceeding |
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L.</creatorcontrib><creatorcontrib>Grimard, D.</creatorcontrib><creatorcontrib>Najafi, K.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection><collection>Electronics & Communications Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Zongliang Cao</au><au>VanDerElzen, B.</au><au>Owen, K. J.</au><au>Jialiang Yan</au><au>Guohong He</au><au>Peterson, R. L.</au><au>Grimard, D.</au><au>Najafi, K.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Drie of fused silica</atitle><btitle>2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS)</btitle><stitle>MEMSYS</stitle><date>2013-01</date><risdate>2013</risdate><spage>361</spage><epage>364</epage><pages>361-364</pages><issn>1084-6999</issn><isbn>9781467356541</isbn><isbn>1467356549</isbn><eisbn>1467356557</eisbn><eisbn>9781467356558</eisbn><abstract>This paper reports detailed characterization results of deep reactive ion etching of fused silica with three different masking materials: single-crystal Si, negative photoresist KMPR and SU-8. With an optimized etch recipe, KMPR and SU-8 show higher effective mask selectivity, are easier to integrate and remove than Si, making them better masks for creating high-aspect ratio features. Using a KMPR mask, a high aspect ratio (8:1) etch with a 6-μm mask opening is obtained. SU-8 masks also achieve high aspect ratios of 4.5:1 for 20-μm wide trenches, with mask selectivity of ~2:1. However the polymeric masks cause greater FS sidewall roughness.</abstract><pub>IEEE</pub><doi>10.1109/MEMSYS.2013.6474253</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1084-6999 |
| ispartof | 2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS), 2013, p.361-364 |
| issn | 1084-6999 |
| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Conferences Etching Fused silica Glass Helium High aspect ratio Masks Mechanical systems Resists Selectivity Silicon Silicon compounds |
| title | Drie of fused silica |
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