Characterizing leakage current in silicon nanowire-based field-effect transistors by applying pseudo-random sequences

Development of miniaturized devices that enable rapid and direct recognition of small molecules has become a growing research area in various fields of nanotechnology. Silicon nanowire-based field-effect transistors (SiNW FETs) have been experimentally demonstrated for direct, label free, highly sel...

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Bibliographische Detailangaben

Hauptverfasser:	Roinila, T., Xiao Yu, Anran Gao, Tie Li, Verho, J., Vilkko, M., Kallio, P., Yuelin Wang, Lekkala, J.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Current measurement Excitation signal design Field effect transistors Field-effect transistor Frequency domain analysis Frequency response measurement Leakage current Logic gates Silicon Silicon nanowire
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