Analysis of electrostatic crosstalk in 3D vertical NAND Charge Trapping Memory with junctionless GAA nanowire FET

The electrostatic crosstalk in the 3D vertical CTM (Charge Trapping Memory) NAND NVM is investigated with various typical operation conditions. The junctionless FET of GAA (Gate-All-Around) nanowire with O/N/O (Oxide/Nitride/Oxide) dielectrics is simulated as the storage cell. The electrostatic prop...

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Bibliographische Detailangaben

Hauptverfasser:	Yijiao Wang, Xiaoyan Liu, Yunxiang Yang, Jieyu Qin, Gang Du, Jinfeng Kang
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Crosstalk Electric fields Electron traps Electrostatics Logic gates Threshold voltage Very large scale integration
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