Study on the characterizations and applications of the pH-Sensor with GZO/glass extended-gate FET

The GZO thin films of the thickness about 200~250nm were deposited on the glass which used as a pH sensor head based on the extended-gate field-effect transistor (EGFET) by r. f. sputtering system in this study. The pH sensing characteristics of the GZO/glass EGFET sensing structure were investigate...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Chiang, Jung-Lung, Kuo, Chia-Yu
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Detection EGFET Field effect transistors Glass GZO Logic gates Nanoelectronics pH-sensor Plasma temperature Semiconductor devices Semiconductors Sensitivity Temperature measurement Temperature sensors Thin films
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