Physical/process parameter dependence of gate capacitance and ballistic performance of InAsySb1−y Quantum Well Field Effect Transistors

This paper reports complete Capacitance-Voltage (CV) characterization of InAs y Sb 1-y Quantum Well Field Effect Transistor (QWFET) along with an analysis of ballistic transport performance. 1-D coupled Schrodinger-Poisson equations are solved for electrostatic performance analysis of QWFET consider...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Niaz, I. A., Alam, M. H., Ahmed, I., Al Azim, Z., Chowdhury, N., Khosru, Q. D. M.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Buried channel device Capacitance Charge carrier density Dielectrics high k dielectric Logic gates Mathematical model quantum well FET Strain strain and wave function penetration Temperature
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