Hump phenomenon in transfer characteristics of double-gated thin-body Tunneling Field-Effect Transistor (TFET) with gate/source overlap

Most of research groups have studied on Tunneling Field-Effect Transistors (TFETs) with assumption that there are no gate/source overlap and abrupt source/channel junction. In this work, we study the electrical characteristics of double-gated thin-body TFET with gate/source overlap and no abrupt sou...

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Bibliographische Detailangaben

Hauptverfasser:	Woo Kim, Hyun, Sun, Min-Chul, Wan Kim, Sang, Park, Byung-Gook
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	band-to-band tunneling Channels Conferences Electrical junctions Field effect transistors Gates hump characteristics Nanoelectronics Semiconductor devices TFET Tunneling
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