An ultra-low power current reused CMOS low noise amplifier for x-band space application
This paper presents fully integrated ultra-low power CMOS low noise amplifier (LNA) for x-band space application by employing current reused technique. It also operates in subthreshold region to reduce power consumption significantly. The state-of-art low noise amplifier targets 10.8 GHz for x-band...
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| creator | Yasami, S. Bayoumi, M. |
| description | This paper presents fully integrated ultra-low power CMOS low noise amplifier (LNA) for x-band space application by employing current reused technique. It also operates in subthreshold region to reduce power consumption significantly. The state-of-art low noise amplifier targets 10.8 GHz for x-band frequency in advanced conventional 65-nm CMOS technologies. It achieves power gain (S 21 ) of 10 dB, noise figure (NF) of 2.9 dB, input-referred third-order intercept point (IIP3) of -9 dBm, while consumes only 125 uA and operates with supply voltage of 0.6 V which results in total power consumption of less than 80 uW. |
| doi_str_mv | 10.1109/ICECS.2012.6463636 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_6463636</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6463636</ieee_id><sourcerecordid>6463636</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-aff3d254c6279e6aad9e5ab05b02d984b2446ccbfd533e589262fbfd72ec42533</originalsourceid><addsrcrecordid>eNpFkN1KAzEQhSMiqLUvoDd5ga3J5Ge7l2WpWqj0ooqXJZtMILLdXZJdqm9vxILMxeHMN3MYhpB7zhacs-pxU6_r_QIYh4WWWuS6ILdc6lJw0Exf_hsur8k8pU_GWN7UFegb8rHq6NSO0RRtf6JDf8JI7RQjdiONOCV0tH7d7ekv7fqQkJrj0AYf8pzvI_0qGtM5mgZjMxoysmYMfXdHrrxpE87POiPvT-u3-qXY7p439WpbBF6qsTDeCwdKWg1lhdoYV6EyDVMNA1ctZQNSamsb75QQqJb5ZvDZlYBWQu7NyMNfbkDEwxDD0cTvw_kR4gdYnFKL</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>An ultra-low power current reused CMOS low noise amplifier for x-band space application</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Yasami, S. ; Bayoumi, M.</creator><creatorcontrib>Yasami, S. ; Bayoumi, M.</creatorcontrib><description>This paper presents fully integrated ultra-low power CMOS low noise amplifier (LNA) for x-band space application by employing current reused technique. It also operates in subthreshold region to reduce power consumption significantly. The state-of-art low noise amplifier targets 10.8 GHz for x-band frequency in advanced conventional 65-nm CMOS technologies. It achieves power gain (S 21 ) of 10 dB, noise figure (NF) of 2.9 dB, input-referred third-order intercept point (IIP3) of -9 dBm, while consumes only 125 uA and operates with supply voltage of 0.6 V which results in total power consumption of less than 80 uW.</description><identifier>ISBN: 1467312614</identifier><identifier>ISBN: 9781467312615</identifier><identifier>EISBN: 1467312606</identifier><identifier>EISBN: 9781467312592</identifier><identifier>EISBN: 9781467312608</identifier><identifier>EISBN: 1467312592</identifier><identifier>DOI: 10.1109/ICECS.2012.6463636</identifier><language>eng</language><publisher>IEEE</publisher><subject>CMOS integrated circuits ; CMOS technology ; Logic gates ; Low-noise amplifiers ; Noise figure ; Power demand ; Transistors</subject><ispartof>2012 19th IEEE International Conference on Electronics, Circuits, and Systems (ICECS 2012), 2012, p.673-676</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6463636$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6463636$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Yasami, S.</creatorcontrib><creatorcontrib>Bayoumi, M.</creatorcontrib><title>An ultra-low power current reused CMOS low noise amplifier for x-band space application</title><title>2012 19th IEEE International Conference on Electronics, Circuits, and Systems (ICECS 2012)</title><addtitle>ICECS</addtitle><description>This paper presents fully integrated ultra-low power CMOS low noise amplifier (LNA) for x-band space application by employing current reused technique. It also operates in subthreshold region to reduce power consumption significantly. The state-of-art low noise amplifier targets 10.8 GHz for x-band frequency in advanced conventional 65-nm CMOS technologies. It achieves power gain (S 21 ) of 10 dB, noise figure (NF) of 2.9 dB, input-referred third-order intercept point (IIP3) of -9 dBm, while consumes only 125 uA and operates with supply voltage of 0.6 V which results in total power consumption of less than 80 uW.</description><subject>CMOS integrated circuits</subject><subject>CMOS technology</subject><subject>Logic gates</subject><subject>Low-noise amplifiers</subject><subject>Noise figure</subject><subject>Power demand</subject><subject>Transistors</subject><isbn>1467312614</isbn><isbn>9781467312615</isbn><isbn>1467312606</isbn><isbn>9781467312592</isbn><isbn>9781467312608</isbn><isbn>1467312592</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2012</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpFkN1KAzEQhSMiqLUvoDd5ga3J5Ge7l2WpWqj0ooqXJZtMILLdXZJdqm9vxILMxeHMN3MYhpB7zhacs-pxU6_r_QIYh4WWWuS6ILdc6lJw0Exf_hsur8k8pU_GWN7UFegb8rHq6NSO0RRtf6JDf8JI7RQjdiONOCV0tH7d7ekv7fqQkJrj0AYf8pzvI_0qGtM5mgZjMxoysmYMfXdHrrxpE87POiPvT-u3-qXY7p439WpbBF6qsTDeCwdKWg1lhdoYV6EyDVMNA1ctZQNSamsb75QQqJb5ZvDZlYBWQu7NyMNfbkDEwxDD0cTvw_kR4gdYnFKL</recordid><startdate>201212</startdate><enddate>201212</enddate><creator>Yasami, S.</creator><creator>Bayoumi, M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201212</creationdate><title>An ultra-low power current reused CMOS low noise amplifier for x-band space application</title><author>Yasami, S. ; Bayoumi, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-aff3d254c6279e6aad9e5ab05b02d984b2446ccbfd533e589262fbfd72ec42533</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2012</creationdate><topic>CMOS integrated circuits</topic><topic>CMOS technology</topic><topic>Logic gates</topic><topic>Low-noise amplifiers</topic><topic>Noise figure</topic><topic>Power demand</topic><topic>Transistors</topic><toplevel>online_resources</toplevel><creatorcontrib>Yasami, S.</creatorcontrib><creatorcontrib>Bayoumi, M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yasami, S.</au><au>Bayoumi, M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>An ultra-low power current reused CMOS low noise amplifier for x-band space application</atitle><btitle>2012 19th IEEE International Conference on Electronics, Circuits, and Systems (ICECS 2012)</btitle><stitle>ICECS</stitle><date>2012-12</date><risdate>2012</risdate><spage>673</spage><epage>676</epage><pages>673-676</pages><isbn>1467312614</isbn><isbn>9781467312615</isbn><eisbn>1467312606</eisbn><eisbn>9781467312592</eisbn><eisbn>9781467312608</eisbn><eisbn>1467312592</eisbn><abstract>This paper presents fully integrated ultra-low power CMOS low noise amplifier (LNA) for x-band space application by employing current reused technique. It also operates in subthreshold region to reduce power consumption significantly. The state-of-art low noise amplifier targets 10.8 GHz for x-band frequency in advanced conventional 65-nm CMOS technologies. It achieves power gain (S 21 ) of 10 dB, noise figure (NF) of 2.9 dB, input-referred third-order intercept point (IIP3) of -9 dBm, while consumes only 125 uA and operates with supply voltage of 0.6 V which results in total power consumption of less than 80 uW.</abstract><pub>IEEE</pub><doi>10.1109/ICECS.2012.6463636</doi><tpages>4</tpages></addata></record> |
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| ispartof | 2012 19th IEEE International Conference on Electronics, Circuits, and Systems (ICECS 2012), 2012, p.673-676 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | CMOS integrated circuits CMOS technology Logic gates Low-noise amplifiers Noise figure Power demand Transistors |
| title | An ultra-low power current reused CMOS low noise amplifier for x-band space application |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-20T21%3A29%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=An%20ultra-low%20power%20current%20reused%20CMOS%20low%20noise%20amplifier%20for%20x-band%20space%20application&rft.btitle=2012%2019th%20IEEE%20International%20Conference%20on%20Electronics,%20Circuits,%20and%20Systems%20(ICECS%202012)&rft.au=Yasami,%20S.&rft.date=2012-12&rft.spage=673&rft.epage=676&rft.pages=673-676&rft.isbn=1467312614&rft.isbn_list=9781467312615&rft_id=info:doi/10.1109/ICECS.2012.6463636&rft_dat=%3Cieee_6IE%3E6463636%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=1467312606&rft.eisbn_list=9781467312592&rft.eisbn_list=9781467312608&rft.eisbn_list=1467312592&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=6463636&rfr_iscdi=true |