Stacking Graphene Channels in Parallel for Enhanced Performance With the Same Footprint

Using the unique ability of graphene to be transferred to virtually any surface, field-effect transistors are demonstrated with vertically stacked graphene channels that are electrically connected in parallel. The graphene in each layer is double gated, with all gates in the stack connected to a com...

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Veröffentlicht in:	IEEE electron device letters 2013-04, Vol.34 (4), p.556-558
Hauptverfasser:	Franklin, A. D., Oida, S., Farmer, D. B., Smith, J. T., Shu-Jen Han, Breslin, C. M., Gignac, L.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Dielectrics Double gate Electronics Exact sciences and technology field-effect transistor (FET) Graphene Logic gates parallel channels Performance evaluation Scanning electron microscopy Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices stacked Transconductance Transistors
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