Numerical fitting of Ionization coefficients for APDs based on ternary materials

The efficiency of the avalanche process in Avalanche photodiodes depends on the Ionization coefficients. Ionization coefficients are dependent on the band-structure of materials. Ionization coefficients at different temperatures and fields are predicted by an analytical formula proposed by Okuto and...

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Bibliographische Detailangaben

Hauptverfasser:	Rabbani, M., Majumder, D., Mohammedy, F. M.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Avalanche process Charge carrier processes Equations Impact ionization Ionization coefficient Lucky drift Materials Mathematical model Particle swarm optimization Particle Swarm Optimization(PSO) Phonon scattering
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