The influence of nonstationary carrier transport on the bandwidth of p-i-n photodiode
The influence of nonstationary carrier transport on the bandwidth and the bandwidth quantum efficiency product of p-i-n photodiodes is analyzed using the complete phenomenological model for two-valley semiconductors. The analysis has been made for various submicron and micron dimensions, for differe...
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| Veröffentlicht in: | Journal of lightwave technology 1997-12, Vol.15 (12), p.2270-2277 |
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| container_issue | 12 |
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| container_title | Journal of lightwave technology |
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| creator | Matavulj, P.S. Gvozdic, D.M. Radunovic, J.B. |
| description | The influence of nonstationary carrier transport on the bandwidth and the bandwidth quantum efficiency product of p-i-n photodiodes is analyzed using the complete phenomenological model for two-valley semiconductors. The analysis has been made for various submicron and micron dimensions, for different bias voltages and for several energies of incident pulse excitation, including the variation of the active area of the p-in photodiode. The analysis shows that, as the thickness of the absorption layer varies, the bandwidth could have more than one maximum, especially for smaller bias voltages. The optimal thickness of the absorption layer versus bias voltage and device area is determined, providing maximal bandwidth and maximal bandwidth-quantum efficiency product. |
| doi_str_mv | 10.1109/50.643555 |
| format | Article |
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The analysis has been made for various submicron and micron dimensions, for different bias voltages and for several energies of incident pulse excitation, including the variation of the active area of the p-in photodiode. The analysis shows that, as the thickness of the absorption layer varies, the bandwidth could have more than one maximum, especially for smaller bias voltages. The optimal thickness of the absorption layer versus bias voltage and device area is determined, providing maximal bandwidth and maximal bandwidth-quantum efficiency product.</description><identifier>ISSN: 0733-8724</identifier><identifier>EISSN: 1558-2213</identifier><identifier>DOI: 10.1109/50.643555</identifier><identifier>CODEN: JLTEDG</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Absorption ; Applied sciences ; Bandwidth ; Electric resistance ; Electronics ; Electrons ; Equations ; Exact sciences and technology ; Frequency response ; Optical fiber communication ; Optoelectronic devices ; Photodetectors ; PIN photodiodes ; Semiconductor electronics. Microelectronics. Optoelectronics. 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The analysis has been made for various submicron and micron dimensions, for different bias voltages and for several energies of incident pulse excitation, including the variation of the active area of the p-in photodiode. The analysis shows that, as the thickness of the absorption layer varies, the bandwidth could have more than one maximum, especially for smaller bias voltages. The optimal thickness of the absorption layer versus bias voltage and device area is determined, providing maximal bandwidth and maximal bandwidth-quantum efficiency product.</description><subject>Absorption</subject><subject>Applied sciences</subject><subject>Bandwidth</subject><subject>Electric resistance</subject><subject>Electronics</subject><subject>Electrons</subject><subject>Equations</subject><subject>Exact sciences and technology</subject><subject>Frequency response</subject><subject>Optical fiber communication</subject><subject>Optoelectronic devices</subject><subject>Photodetectors</subject><subject>PIN photodiodes</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Voltage</subject><issn>0733-8724</issn><issn>1558-2213</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1997</creationdate><recordtype>article</recordtype><recordid>eNqFkEtLAzEURoMoWKsLt66yEMHF1GTynKUUX1Bw066HTCahkWkyJinivzdlSreuAjfn-7j3AHCL0QJj1DwxtOCUMMbOwAwzJqu6xuQczJAgpJKippfgKqUvhDClUszAZr010Hk77I3XBgYLffApq-yCV_EXahWjMxHmqHwaQ8wweJhLplO-_3F93h4yY-UqD8dtyKF3oTfX4MKqIZmb4zsHm9eX9fK9Wn2-fSyfV5WmiOTKSMuxahqFDFVlZ6kwIT3msqOMC8trJjuhcUeI6IhoytQirploesqlKLM5eJh6xxi-9ybldueSNsOgvAn71NZNuZtS_D8oOSl2mgI-TqCOIaVobDtGtysmWozag-GWoXYyXNj7Y6lKWg22KNIunQI1xpIzWrC7CXPGmNPvseMPb2KB0A</recordid><startdate>19971201</startdate><enddate>19971201</enddate><creator>Matavulj, P.S.</creator><creator>Gvozdic, D.M.</creator><creator>Radunovic, J.B.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope></search><sort><creationdate>19971201</creationdate><title>The influence of nonstationary carrier transport on the bandwidth of p-i-n photodiode</title><author>Matavulj, P.S. ; Gvozdic, D.M. ; Radunovic, J.B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c403t-e8f61a99a0e4a5558a133d168b4567f6258b7c1b337b379b45f06c579d46877b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Absorption</topic><topic>Applied sciences</topic><topic>Bandwidth</topic><topic>Electric resistance</topic><topic>Electronics</topic><topic>Electrons</topic><topic>Equations</topic><topic>Exact sciences and technology</topic><topic>Frequency response</topic><topic>Optical fiber communication</topic><topic>Optoelectronic devices</topic><topic>Photodetectors</topic><topic>PIN photodiodes</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Matavulj, P.S.</creatorcontrib><creatorcontrib>Gvozdic, D.M.</creatorcontrib><creatorcontrib>Radunovic, J.B.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>Journal of lightwave technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Matavulj, P.S.</au><au>Gvozdic, D.M.</au><au>Radunovic, J.B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The influence of nonstationary carrier transport on the bandwidth of p-i-n photodiode</atitle><jtitle>Journal of lightwave technology</jtitle><stitle>JLT</stitle><date>1997-12-01</date><risdate>1997</risdate><volume>15</volume><issue>12</issue><spage>2270</spage><epage>2277</epage><pages>2270-2277</pages><issn>0733-8724</issn><eissn>1558-2213</eissn><coden>JLTEDG</coden><abstract>The influence of nonstationary carrier transport on the bandwidth and the bandwidth quantum efficiency product of p-i-n photodiodes is analyzed using the complete phenomenological model for two-valley semiconductors. The analysis has been made for various submicron and micron dimensions, for different bias voltages and for several energies of incident pulse excitation, including the variation of the active area of the p-in photodiode. The analysis shows that, as the thickness of the absorption layer varies, the bandwidth could have more than one maximum, especially for smaller bias voltages. The optimal thickness of the absorption layer versus bias voltage and device area is determined, providing maximal bandwidth and maximal bandwidth-quantum efficiency product.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/50.643555</doi><tpages>8</tpages></addata></record> |
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| ispartof | Journal of lightwave technology, 1997-12, Vol.15 (12), p.2270-2277 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Absorption Applied sciences Bandwidth Electric resistance Electronics Electrons Equations Exact sciences and technology Frequency response Optical fiber communication Optoelectronic devices Photodetectors PIN photodiodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Voltage |
| title | The influence of nonstationary carrier transport on the bandwidth of p-i-n photodiode |
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