Semiconductor materials for thermoelectric power generation up to 700 C

An investigation into the thermoelectric properties of semiconductor materials to uncover the feasibility of power-generating efficiencies at temperatures from 25 to 700 C. Discussion is centered on general considerations of efficiency factors leading to materials selection and some preliminary resu...

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Veröffentlicht in:	Electrical engineering (New York, N.Y.) N.Y.), 1960-06, Vol.79 (6), p.450-459
Hauptverfasser:	Rosi, F. D., Dismukes, J. P., Hockings, E. F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Compounds Conductivity Materials Metals Temperature distribution Temperature measurement
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creator	Rosi, F. D. Dismukes, J. P. Hockings, E. F.
description	An investigation into the thermoelectric properties of semiconductor materials to uncover the feasibility of power-generating efficiencies at temperatures from 25 to 700 C. Discussion is centered on general considerations of efficiency factors leading to materials selection and some preliminary results in the evaluation of compound semiconductors and their solid-solution alloys.
doi_str_mv	10.1109/EE.1960.6432651
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subjects	Compounds Conductivity Materials Metals Temperature distribution Temperature measurement
title	Semiconductor materials for thermoelectric power generation up to 700 C
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