Structural and photoelectric studies on double barrier quantum well infrared detectors

GaAs-AlAs-GaAlAs double barrier quantum well (DBQW) structures are employed for making the 3-5 /spl mu/m photovoltaic infrared (IR) detectors with a peak detectivity of 5/spl times/10/sup 11/ cmHz/sup 1/2 //W at 80 K. Double crystal X-ray diffraction is combined with synchrotron radiation X-ray anal...

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Bibliographische Detailangaben

Hauptverfasser:	Wu, W.G., Jiang, D.S., Cui, L.Q., Song, C.Y., Zhuang, Y.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Gallium arsenide Infrared detectors Photoconductivity Photovoltaic systems Radiation detectors Solar power generation Synchrotron radiation X-ray detection X-ray detectors X-ray diffraction
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