On-wafer probing measurement and optimization of MIM capacitors for integrated passive device application

On-wafer probing measurement and optimization of MIM capacitors for integrated passive device application

With wireless applications flourish like mobile phone, consumer end products must tend to small form factor development. More functions, less dimension, and high integration are future technology trend in chip package development roadmap. Integrated Passive Device (IPD) has these advantages in SiP a...

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Hauptverfasser: Ho-chuan Lin, Ming-Fan Tsai, Lee, Daniel
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Sprache:eng
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Capacitors
Copper
Passive circuits
Polymers
Silicon
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Ming-Fan Tsai
Lee, Daniel
description With wireless applications flourish like mobile phone, consumer end products must tend to small form factor development. More functions, less dimension, and high integration are future technology trend in chip package development roadmap. Integrated Passive Device (IPD) has these advantages in SiP and 3DIC applications. IPD technology can integrated more passive circuits/components in one IPD die and reduce SMD components in SiP module. This can reduce SMD components quantity and assembly cost then increase SiP profit margin. In 3DIC field, IPD can be implemented in Silicon interposer to increase signal integrity. In this paper, we use Agilent ADS Momentum and EMpro to design and simulate MIM capacitors and use SPIL IPD process to implement these capacitors. From on-wafer probing measurement results, we can provide good performance capacitors using in wireless applications.
doi_str_mv 10.1109/IMPACT.2012.6420281
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subjects Capacitors
Copper
Passive circuits
Polymers
Silicon
title On-wafer probing measurement and optimization of MIM capacitors for integrated passive device application
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