An innovative annealing-twinned Ag-Au-Pd bonding wire for IC and LED packaging

An innovative annealing twinned Ag-(8-30%)Au-(0.01-6%) Pd wire for IC and LED packaging has been developed. It exhibits high thermal stability during aging at 600°C and a small heat affected zone after wire bonding. The mean failure time of this annealing twinned Ag-Au-Pd wire when stressed with a c...

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Hauptverfasser: Hsing-Hua Tsai, Jun-Der Lee, Chih-Hsin Tsai, Hsi-Ching Wang, Che-Cheng Chang, Tung-Han Chuang
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:An innovative annealing twinned Ag-(8-30%)Au-(0.01-6%) Pd wire for IC and LED packaging has been developed. It exhibits high thermal stability during aging at 600°C and a small heat affected zone after wire bonding. The mean failure time of this annealing twinned Ag-Au-Pd wire when stressed with a current density of 1.23 × 10 5 A/cm 2 is about double that of the conventional grained Ag-alloy wire. For packaging on Si chips with Al pads, it possesses sufficient intermetallic compounds at the initial as-bonded stage but a slow growth rate during further reliability tests. The excellent reliability of this new bonding wire has been verified in a DDRII BGA IC package and a 0605 LED package. In the LED package, this Ag-alloy wire provides the extra benefit of increasing the light output power (LOP) by about 3.2%.
ISSN:2150-5934
2150-5942
DOI:10.1109/IMPACT.2012.6420241