Leakage in CMOS devices induced by pattern-dependent microloading effect

The difference of pattern density in photomask may cause different photo resist profile, and then etch rate or implant profile can be impacted. This is called the microloading effect. Some special topological structures in chip layout design may result in serious leakage in CMOS devices due to the m...

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Bibliographische Detailangaben

Hauptverfasser:	Miao Wu, Wang, W., Li Tian, Chunlei Wu, Diwei Fan
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	CMOS Doping Failure analysis Implants Integrated circuits Layout Lithography Microloading effect Photo resist Resists
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