Numerical simulation of avalanche breakdown within InP-InGaAs SAGCM standoff avalanche photodiodes

The breakdown location within a planar InP/In/sub 0.53/Ga/sub 0.47/As (InGaAs) separate absorption, grading, charge sheet, and multiplication (SAGCM) avalanche photodiode (APD), using the standoff breakdown suppression design to replace guard rings, depends on the two-dimensional (2-D) geometry of t...

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Veröffentlicht in:	Journal of lightwave technology 1997-11, Vol.15 (11), p.2137-2140
Hauptverfasser:	Haralson, J.N., Parks, J.W., Brennan, K.F., Clark, W., Tarof, L.E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorption Applied sciences Avalanche breakdown Avalanche photodiodes Electric breakdown Electronics Etching Exact sciences and technology Geometry Indium gallium arsenide Indium phosphide Numerical simulation Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Two dimensional displays
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