Dual-layer metal-grid polarizer for polarization image sensor in 65-nm CMOS technology
We demonstrate an image sensor pixel with dual-layer metal grid polarizer with extinction ratio over 80 in 65-nm standard CMOS technology. By recent advanced CMOS technology, it is feasible to design sub-wavelength metal layer patterns in the visible wavelengths. Fine metal grid has high polarizatio...
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| creator | Sasagawa, K. Wakama, N. Okabayashi, D. Noda, T. Tokuda, T. Ohta, J. |
| description | We demonstrate an image sensor pixel with dual-layer metal grid polarizer with extinction ratio over 80 in 65-nm standard CMOS technology. By recent advanced CMOS technology, it is feasible to design sub-wavelength metal layer patterns in the visible wavelengths. Fine metal grid has high polarization characteristics. Its extinction ratio depends on the grid pitch. Thus, high extinction ratio can be realized by using deep sub-micron CMOS technology. As the grating pitch decreases, extinction ratio becomes high. On the other hand, multiple metal layers can be designed in usual CMOS technology. It is expected that improvement of extinction ratio is also achieved by utilizing this feature. In this work, we compare the extinction ratios of dual-layer polarizers with different spacing and demonstrate high extinction ratio can be achieved by optimizing the spacing. |
| doi_str_mv | 10.1109/ICSENS.2012.6411160 |
| format | Conference Proceeding |
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By recent advanced CMOS technology, it is feasible to design sub-wavelength metal layer patterns in the visible wavelengths. Fine metal grid has high polarization characteristics. Its extinction ratio depends on the grid pitch. Thus, high extinction ratio can be realized by using deep sub-micron CMOS technology. As the grating pitch decreases, extinction ratio becomes high. On the other hand, multiple metal layers can be designed in usual CMOS technology. It is expected that improvement of extinction ratio is also achieved by utilizing this feature. In this work, we compare the extinction ratios of dual-layer polarizers with different spacing and demonstrate high extinction ratio can be achieved by optimizing the spacing.</description><identifier>ISSN: 1930-0395</identifier><identifier>ISBN: 9781457717666</identifier><identifier>ISBN: 1457717662</identifier><identifier>EISSN: 2168-9229</identifier><identifier>EISBN: 9781457717659</identifier><identifier>EISBN: 9781457717673</identifier><identifier>EISBN: 1457717654</identifier><identifier>EISBN: 1457717670</identifier><identifier>DOI: 10.1109/ICSENS.2012.6411160</identifier><language>eng</language><publisher>IEEE</publisher><subject>CMOS integrated circuits ; CMOS technology ; Extinction ratio ; Metals ; Optical variables measurement ; Optimized production technology ; Wires</subject><ispartof>2012 IEEE Sensors, 2012, p.1-4</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6411160$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6411160$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Sasagawa, K.</creatorcontrib><creatorcontrib>Wakama, N.</creatorcontrib><creatorcontrib>Okabayashi, D.</creatorcontrib><creatorcontrib>Noda, T.</creatorcontrib><creatorcontrib>Tokuda, T.</creatorcontrib><creatorcontrib>Ohta, J.</creatorcontrib><title>Dual-layer metal-grid polarizer for polarization image sensor in 65-nm CMOS technology</title><title>2012 IEEE Sensors</title><addtitle>ICSENS</addtitle><description>We demonstrate an image sensor pixel with dual-layer metal grid polarizer with extinction ratio over 80 in 65-nm standard CMOS technology. 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In this work, we compare the extinction ratios of dual-layer polarizers with different spacing and demonstrate high extinction ratio can be achieved by optimizing the spacing.</description><subject>CMOS integrated circuits</subject><subject>CMOS technology</subject><subject>Extinction ratio</subject><subject>Metals</subject><subject>Optical variables measurement</subject><subject>Optimized production technology</subject><subject>Wires</subject><issn>1930-0395</issn><issn>2168-9229</issn><isbn>9781457717666</isbn><isbn>1457717662</isbn><isbn>9781457717659</isbn><isbn>9781457717673</isbn><isbn>1457717654</isbn><isbn>1457717670</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2012</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVUMtOwzAQNC-JUvoFvfgHXHbt-LFHFApUKvTQimtlUrsYpUmVhEP4eiJRDpxmdkYzWg1jU4QZItDdIl_PX9czCShnJkNEA2dsQtZhpq1FazSds5FE4wRJSRf_PGMu2QhJgQBF-prdtO0ngAQt3Yi9PXz5UpS-Dw0_hG7g-ybt-LEufZO-BzHWzd_lu1RXPB38PvA2VO3gpIobLaoDz19Wa96F4qOqy3rf37Kr6Ms2TE44ZpvH-SZ_FsvV0yK_X4pE0AkfMZMOaJe9O1cE7SxEo5WPMnNkAG1ho5UmFpGcido5UqR2KLUzYciQGrPpb20KIWyPzfBb029PC6kfQ4dVWg</recordid><startdate>201210</startdate><enddate>201210</enddate><creator>Sasagawa, K.</creator><creator>Wakama, N.</creator><creator>Okabayashi, D.</creator><creator>Noda, T.</creator><creator>Tokuda, T.</creator><creator>Ohta, J.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201210</creationdate><title>Dual-layer metal-grid polarizer for polarization image sensor in 65-nm CMOS technology</title><author>Sasagawa, K. ; Wakama, N. ; Okabayashi, D. ; Noda, T. ; Tokuda, T. ; Ohta, J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-af142809d4b88ce5870f653af24896017c7f726fcf986f5889393d12586ed4b93</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2012</creationdate><topic>CMOS integrated circuits</topic><topic>CMOS technology</topic><topic>Extinction ratio</topic><topic>Metals</topic><topic>Optical variables measurement</topic><topic>Optimized production technology</topic><topic>Wires</topic><toplevel>online_resources</toplevel><creatorcontrib>Sasagawa, K.</creatorcontrib><creatorcontrib>Wakama, N.</creatorcontrib><creatorcontrib>Okabayashi, D.</creatorcontrib><creatorcontrib>Noda, T.</creatorcontrib><creatorcontrib>Tokuda, T.</creatorcontrib><creatorcontrib>Ohta, J.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sasagawa, K.</au><au>Wakama, N.</au><au>Okabayashi, D.</au><au>Noda, T.</au><au>Tokuda, T.</au><au>Ohta, J.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Dual-layer metal-grid polarizer for polarization image sensor in 65-nm CMOS technology</atitle><btitle>2012 IEEE Sensors</btitle><stitle>ICSENS</stitle><date>2012-10</date><risdate>2012</risdate><spage>1</spage><epage>4</epage><pages>1-4</pages><issn>1930-0395</issn><eissn>2168-9229</eissn><isbn>9781457717666</isbn><isbn>1457717662</isbn><eisbn>9781457717659</eisbn><eisbn>9781457717673</eisbn><eisbn>1457717654</eisbn><eisbn>1457717670</eisbn><abstract>We demonstrate an image sensor pixel with dual-layer metal grid polarizer with extinction ratio over 80 in 65-nm standard CMOS technology. By recent advanced CMOS technology, it is feasible to design sub-wavelength metal layer patterns in the visible wavelengths. Fine metal grid has high polarization characteristics. Its extinction ratio depends on the grid pitch. Thus, high extinction ratio can be realized by using deep sub-micron CMOS technology. As the grating pitch decreases, extinction ratio becomes high. On the other hand, multiple metal layers can be designed in usual CMOS technology. It is expected that improvement of extinction ratio is also achieved by utilizing this feature. In this work, we compare the extinction ratios of dual-layer polarizers with different spacing and demonstrate high extinction ratio can be achieved by optimizing the spacing.</abstract><pub>IEEE</pub><doi>10.1109/ICSENS.2012.6411160</doi><tpages>4</tpages></addata></record> |
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| ispartof | 2012 IEEE Sensors, 2012, p.1-4 |
| issn | 1930-0395 2168-9229 |
| language | eng |
| recordid | cdi_ieee_primary_6411160 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | CMOS integrated circuits CMOS technology Extinction ratio Metals Optical variables measurement Optimized production technology Wires |
| title | Dual-layer metal-grid polarizer for polarization image sensor in 65-nm CMOS technology |
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