Design improvement of L-shaped tunneling field-effect transistors

L-shaped tunneling field-effect transistors (TFETs) feature high current drivability and abrupt on-off transition. For further improvement of L-shaped TFETs, tunneling regions become n-type doped in this study. The doping concentration of the tunneling regions is optimized. The proposed novel L-shap...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Sang Wan Kim, Woo Young Choi, Min-Chul Sun, Hyun Woo Kim, Byung-Gook Park
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Doping Educational institutions Logic gates Photonic band gap Silicon steep slope subthreshold swing TFET Transistors Tunneling
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!